參數(shù)資料
型號(hào)： HY27SS16121M
廠商： Hynix Semiconductor Inc.
英文描述： 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
中文描述： 512兆（64Mx8bit / 32Mx16bit）NAND閃存
文件頁(yè)數(shù)： 7/43頁(yè)
文件大小： 729K
代理商： HY27SS16121M
Rev 0.6 / Oct. 2004
7
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
MEMORY ARRAY ORGANIZATION
The memory array is made up of NAND structures where 16 cells are connected in series.
The memory array is organized in blocks where each block contains 32 pages. The array is split into two areas, the
main area and the spare area. The main area of the array is used to store data whereas the spare area is typically used
to store Error Correction Codes, software flags or Bad Block identification.
In x8 devices the pages are split into a main area with two half pages of 256 Bytes each and a spare area of 16 Bytes.
In the x16 devices the pages are split into a 256 Word main area and an 8 Word spare area. Refer to Figure 8, Memory
Array Organization.
Bad Blocks
The NAND Flash 528 Byte/ 264 Word Page devices may contain Bad Blocks, that is blocks that contain one or more
invalid bits whose reliability is not guaranteed. Additional Bad Blocks may develop during the lifetime of the device.
The Bad Block Information is written prior to shipping (refer to Bad Block Management section for more details).
The values shown include both the Bad Blocks that are present when the device is shipped and the Bad Blocks that
could develop later on.
These blocks need to be managed using Bad Blocks Management, Block Replacement or Error Correction Codes.
Figure 7. Memory Array Organization
1st half Page
(256 bytes)
2nd half Page
(256 bytes)
Block
Page
512 Bytes
16
Bytes
8 bits
8 bits
512 Bytes
16
Bytes
Page Buffer, 528 Bytes
x8 DEVICES
Block= 32 Pages
Page= 528 Bytes (512+16)
Main Area
Block
Page
256 Words
8
Words
16 bits
16 bits
256 Words
8
Words
Page Buffer, 264 Words
x16 DEVICES
Block= 32 Pages
Page= 264 Words (256+8)
SpaeAea
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