參數(shù)資料
型號(hào): HY29F080T-12
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: x8 Flash EEPROM
中文描述: 1M X 8 FLASH 5V PROM, 120 ns, PDSO40
封裝: TSOP-40
文件頁(yè)數(shù): 28/38頁(yè)
文件大?。?/td> 366K
代理商: HY29F080T-12
28
Rev. 6.1/May 01
HY29F080
AC CHARACTERISTICS
t
BUSY
t
CH
t
OE
t
CE
t
RC
VA
Complement
Complement
True
Valid Data
Status Data
Status Data
True
Valid Data
RY/BY#
DQ[6:0]
DQ[7]
WE#
OE#
CE#
Addresses
VA
VA
t
ACC
t
OEH
t
OH
t
DF
Notes:
1. VA = Valid Address for reading Data# Polling status data (see Write Operation Status section).
2. Illustration shows first status cycle after command sequence, last status read cycle and array data read cycle.
Figure 17. Data# Polling Timings (During Automatic Algorithms)
t
BUSY
t
CH
t
OE
t
CE
t
RC
Valid Status
Valid Status
Valid Status
RY/BY#
DQ[6], [2]
WE#
OE#
CE#
Addresses
VA
VA
VA
t
OEH
t
OH
t
DF
VA
(second read)
(first read)
(stops toggling)
Valid Data
t
ACC
Notes:
1. VA = Valid Address for reading Toggle Bits (DQ2, DQ6) status data (see Write Operation Status section).
2. Illustration shows first two status read cycles after command sequence, last status read cycle and array data read cycle.
Figure 18. Toggle Polling Timings (During Automatic Algorithms)
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