參數(shù)資料
型號(hào)： HY29F400TT90
廠商： Hynix Semiconductor Inc.
英文描述： 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
中文描述： 4兆位（512Kx8/256Kx16）5伏只閃存
文件頁(yè)數(shù)： 35/40頁(yè)
文件大?。?/td> 509K
代理商： HY29F400TT90
35
Rev. 5.2/May 01
HY29F400
AC CHARACTERISTICS
0x555 for Program
0x2AA for Erase
PA for Program
SA for Sector Erase
0x555 for Chip Erase
t
WS
t
RH
t
WH
CE#
OE#
Addresses
t
WC
VA
t
AS
t
AH
WE#
Data
RY/BY#
t
DS
Status
D
OUT
t
BUSY
t
WHWH1
or t
WHWH2
or t
WHWH3
t
DH
0xA0 for Program
0x55 for Erase
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
RESET#
t
CP
t
CPH
t
GHEL
Notes:
1.
PA = program address, PD = program data, VA = Valid Address for reading program or erase status (see Write
Operation Status section), D
OUT
= array data read at VA.
Illustration shows the last two cycles of the program or erase command sequence and the last status read cycle.
Word mode addressing shown.
RESET# shown only to illustrate t
RH
measurement references. It cannot occur as shown during a valid command
sequence.
2.
3.
4.
Figure 25. Alternate CE# Controlled Write Operation Timings
相關(guān)PDF資料
PDF描述
HY29F400TR45 128 x 64 pixel format, White LED backlight
HY29F400TR55 128 x 64 pixel format, White or blue LED backlight
HY29F400TR70 128 x 64 pixel format, White or blue LED backlight
HY29F400TR90 150 x 32 pixel format, LED Backlight available
HY29F400BG70 MS3470L14-5A
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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HY29F800ABG-12I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
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