參數(shù)資料
型號(hào)： HY29LV160BF-70
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
中文描述： 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
封裝： 8 X 9 MM, FBGA-48
文件頁(yè)數(shù)： 33/48頁(yè)
文件大小： 517K
代理商： HY29LV160BF-70
33
Rev. 1.2/May 01
HY29LV160
AC CHARACTERISTICS
Notes:
1. SA =Sector Address (for sector erase), VA = Valid Address for reading status data (see Write Operation Status section),
D
is the true data at the read address.(0xFF after an erase operation).
2. Commands shown are for Word mode operation.
3. V
CC
shown only to illustrate t
VCS
measurement references. It cannot occur as shown during a valid command sequence.
Figure 20. Sector/Chip Erase Operation Timings
Addresses
CE#
t
WC
0x2AA
VA
VA
SA
OE#
t
AS
t
AH
t
WPH
t
WP
t
GHWL
t
CS
t
CH
WE#
Data
t
DS
t
DH
0x55
0x30
Status
D
OUT
t
WHWH2
or
WHWH3
RY/BY#
t
BUSY
t
RB
t
VCS
V
CC
Erase Command Sequence (last two cycles)
Read Status Data (last two cycles)
Address = 0x555
for chip erase
Data = 0x10
for chip erase
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