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| 型號(hào)： | HY29LV160BT-12I |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| 中文描述： | 1M X 16 FLASH 2.7V PROM, 120 ns, PDSO48 |
| 封裝： | TSOP-48 |
| 文件頁數(shù)： | 31/48頁 |
| 文件大?。?/td> | 517K |
| 代理商： | HY29LV160BT-12I |
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31
Rev. 1.2/May 01
HY29LV160
AC CHARACTERISTICS
Program and Erase Operations
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Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25
°
C, V
= 3.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case condi-
tions of 90
°
C, V
= 2.7 volts (3.0 volts for - 70 version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 6 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes
are programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most
bytes/words program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the
maximum byte/word program time specified is exceeded. See Write Operation Status section for additional information.
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