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參數(shù)資料
| 型號： | HY29LV160BT-80 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| 中文描述： | 1M X 16 FLASH 2.7V PROM, 80 ns, PDSO48 |
| 封裝： | TSOP-48 |
| 文件頁數(shù)： | 16/48頁 |
| 文件大小： | 517K |
| 代理商： | HY29LV160BT-80 |
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16
Rev. 1.2/May 01
HY29LV160
even if specified for erasure, is not affected by the
sector erase operation.
The Sector Erase command sequence starts the
Automatic Erase algorithm, which preprograms
and verifies the specified unprotected sectors for
an all zero data pattern prior to electrical erase.
The device then provides the required number of
internally generated erase pulses and verifies cell
erasure within the proper cell margins. The host
system is not required to provide any controls or
timings during these operations.
After the sector erase data cycle (the sixth bus
cycle) of the command sequence is issued, a sec-
tor erase time-out of 50 μs, measured from the
rising edge of the final WE# pulse in that bus cycle,
begins. During this time-out window, an additional
sector erase data cycle, specifying the sector ad-
dress of another sector to be erased, may be writ-
ten into an internal sector erase buffer. This buffer
may be loaded in any sequence, and the number
of sectors specified may be from one sector to all
sectors. The only restriction is that the time be-
tween these additional data cycles must be less
than 50 μs, otherwise erasure may begin before
the last data cycle is accepted. To ensure that all
data cycles are accepted, it is recommended that
host processor interrupts be disabled during the
START
YES
Erase An
Additional Sector
Check Erase Status
(See Write Operation Status
Section)
Setup First (or Next) Sector
Address for Erase Operation
ERASE COMPLETE
Write First Five Cycles of
SECTOR ERASE
Command Sequence
Write Last Cycle (SA/0x30)
of SECTOR ERASE
Command Sequence
Sector Erase
Time-out (DQ[3])
Expired
NO
YES
NO
GO TO
ERROR RECOVERY
DQ[5] Error Exit
Normal Exit
Sectors which require erasure
but which were not specified in
this erase cycle must be erased
later using a new command
sequence
Figure 6. Sector Erase Procedure
time that the additional cycles are being issued
and then be re-enabled afterwards.
If all sectors specified for erasing are protected,
the device returns to reading array data after ap-
proximately 100 μs. If at least one specified sec-
tor is not protected, the erase operation erases
the unprotected sectors, and ignores the command
for the sectors that are protected.
The system can monitor DQ[3] to determine if the
50 μs sector erase time-out has expired, as de-
scribed in the Write Operation Status section. If
the time between additional sector erase data
cycles can be insured to be less than the time-
out, the system need not monitor DQ[3].
Any command other than Sector Erase or Erase
Suspend during the time-out period resets the
device to reading array data. The system must
then rewrite the command sequence, including any
additional sector erase data cycles. Once the sec-
tor erase operation itself has begun, only the Erase
Suspend command is valid. All other commands
are ignored.
As for the Chip Erase command, note that a hard-
ware reset immediately terminates the sector
erase operation. To ensure data integrity, the
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY29LV160 | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BT-12I | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BT-70I | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BT-80I | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BT-90I | 16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY29LV160BT-80I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BT-90 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BT-90I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
| HY29LV160BT-90V | 制造商:SK Hynix Inc 功能描述: 制造商:SK Hynix Inc 功能描述:NOR Flash, 1M x 16, 48 Pin, Plastic, TSSOP |
| HY29LV160TF-12 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory |
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