參數(shù)資料
型號(hào)： HY51V7403HG
廠商： Hynix Semiconductor Inc.
英文描述： Chemicals, Coatings; Features:Protects & insulates components, circuit traces & repairs. Improves & protects circuit board modifications; protects against moisture, abrasion & chemicals. Resistivity: 3 x 10^13 Ohm.; Volume:5ml
中文描述： 4米× 4位EDO公司的DRAM
文件頁(yè)數(shù)： 6/11頁(yè)
文件大小： 96K
代理商： HY51V7403HG
HY51V(S)17403HG/HGL
Rev.0.1/Apr.01
6
- continued -
Read Cycle
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
/OE to Din delay time
t
ODD
13
-
15
-
18
-
ns
5
/OE delay time from Din
t
DZO
0
-
0
-
0
-
ns
6
/CAS delay time from Din
tDZC
0
-
0
-
0
-
ns
6
Transition time ( Rise and Fall)
t
T
2
50
2
50
2
50
ns
7
Refresh period
t
REF
-
32
-
32
-
32
ms
2K Ref.
Refresh period (L-version)
-
128
-
128
-
128
ms
2K Ref.
Parameter
Symbol
-50
-60
-70
Unit
Note
Min
Max
Min
Max
Min
Max
Access time from /RAS
t
RAC
-
50
-
60
-
70
ns
8,9,19
Access time from /CAS
t
CAC
-
13
-
15
-
18
ns
9,10,
17,19
Access time from column address
tAA
-
25
-
30
-
35
ns
9,11,
17,19
Access time from /OE
t
OAC
-
13
-
15
-
18
ns
9
Read command set-up time
t
RCS
0
-
0
-
0
-
ns
Read command hold time to /CAS
tRCH
0
-
0
-
0
-
ns
12
Read command hold time from /RAS
t
RCHR
50
-
60
-
70
-
ns
Read command hold time to /RAS
t
RRH
5
-
5
-
5
-
ns
12
Column address to /RAS lead time
t
RAL
25
-
30
-
35
-
ns
Column address to /CAS lead time
tCAL
15
-
18
-
23
-
ns
/CAS to output in low-Z
tCLZ
0
-
0
-
0
-
ns
Output data hold time
t
OH
3
-
3
-
3
-
ns
Output data hold time from /OE
tOHO
3
-
3
-
3
-
ns
Output buffer turn off time to /OE
t
OEZ
-
13
-
15
-
15
ns
13
Output buffer turn off time
t
OFF
-
13
-
15
-
15
ns
13
/CAS to Din delay time
tCDD
13
-
15
-
18
-
ns
5
Output data hold time from /RAS
t
OHR
3
-
3
-
3
-
ns
Output buffer turn-off time to /RAS
tOFR
-
13
-
15
-
15
ns
Output buffer turn off time to /WE
t
WEZ
-
13
-
15
-
15
ns
/WE to DIN delay time
t
WDD
13
-
15
-
18
-
ns
/RAS to DIN delay time
tRDD
13
-
15
-
18
-
ns
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PDF描述
HY51VS17403HG 4M x 4Bit EDO DRAM
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