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參數(shù)資料
| 型號： | HY57V161610DTC-55 |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO50 |
| 封裝： | 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 |
| 文件頁數(shù)： | 8/13頁 |
| 文件大小： | 656K |
| 代理商： | HY57V161610DTC-55 |
HY57V161610D
Rev. 4.0/Aug. 02
8
AC CHARACTERISTICS
(TA=0
°
C
to 70
°
C
, V
DD
=3.0V to
3.6V, V
SS
=0V
Note1,2
)
- continued -
Note :
1.V
DD
(min) is 3.15V when HY57V161610DTC-7 operates at CAS latency=2 and tCK2=8.9ns.
2.V
DD
(min) of HY57V161610DTC-5/55 is 3.15V
3.tCK2 is 8.9ns only when tAC2 is 7.9ns in HY57V161610DTC-6 and HY57V161610DTC-7.
4.Assume tR / tF (input rise and fall time ) is 1ns.
Parameter
Symbol
-8
-10
-15
Unit
Note
Min
Max
Min
Max
Min
Max
System clock cycle
time
CL=3
tCK3
8
-
10
-
15
-
ns
CL=2
tCK2
12
-
12
-
15
-
3
CL=1
tCK1
-
-
-
-
15
-
Clock high pulse width
tCHW
3
-
3
-
3
-
ns
4
Clock low pulse width
tCLW
3
-
3
-
3
-
ns
4
Access time from
clock
CL=3
tAC3
-
6
-
7
-
7
ns
CL=2
tAC2
-
6
-
7
-
7
3
CL=1
tAC1
-
-
-
-
-
14
Data-out hold time
tOH
2.5
-
2.5
-
2.5
-
ns
Data-Input setup time
tDS
2
-
2.5
-
2.5
-
ns
4
Data-Input hold time
tDH
1
-
1
-
1
-
ns
4
Address setup time
tAS
2
-
2.5
-
2.5
-
ns
4
Address hold time
tAH
1
-
1
-
1
-
ns
4
CKE setup time
tCKS
2
-
2.5
-
2.5
-
ns
4
CKE hold time
tCKH
1
-
1
-
1
-
ns
4
Command setup time
tCS
2
-
2.5
-
2.5
-
ns
4
Command hold time
tCH
1
-
1
-
1
-
ns
4
CLK to data output in low Z-time
tOLZ
2
-
2
-
2
-
ns
CLK to data output in high Z-time
tOHZ
2
8
3
10
3
15
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY57V161610DTC-6 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610DTC-7 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610DTC-8 | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-15I | 2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610ET-5I | 2 Banks x 512K x 16 Bit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V161610DTC-55I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610DTC-6 | 制造商:SK Hynix Inc 功能描述: |
| HY57V161610DTC-6I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2 Banks x 512K x 16 Bit Synchronous DRAM |
| HY57V161610DTC7 | 制造商:HYNIX 功能描述:* |
| HY57V161610DTC-7 | 制造商:SK Hynix Inc 功能描述: 制造商:HYUNDAI 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
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