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參數(shù)資料
| 型號： | HY57V651620B |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 4 Banks x 1M x 16Bit Synchronous DRAM |
| 中文描述： | 4銀行× 1米× 16位同步DRAM |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 81K |
| 代理商： | HY57V651620B |
HY57V651620B
Rev. 1.9/Apr.01
11
COMMAND TRUTH TABLE
Note :
1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high
2. X = Don
′
t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address,
Opcode = Operand Code, NOP = No Operation
C o m m a n d
C K E n - 1
C K E n
C S
R A S
C A S
W E
D Q M
A D D R
A10/
AP
BA
Note
Mode Register Set
H
X
L
L
L
L
X
O P c o d e
No Operation
H
X
H
X
X
X
X
X
L
H
H
H
Bank Active
H
X
L
L
H
H
X
R A
V
Read
H
X
L
H
L
H
X
C A
L
V
Read with Autoprecharge
H
Write
H
X
L
H
L
L
X
C A
L
V
Write with Autoprecharge
H
Precharge All Banks
H
X
L
L
H
L
X
X
H
X
Precharge selected Bank
L
V
Burst Stop
H
X
L
H
H
L
X
X
D Q M
H
X
V
X
Auto Refresh
H
H
L
L
L
H
X
X
Self Refresh
1
Entry
H
L
L
L
L
H
X
X
Exit
L
H
H
X
X
X
X
L
H
H
H
Precharge
power down
Entry
H
L
H
X
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
X
L
H
H
H
Clock
Suspend
Entry
H
L
H
X
X
X
X
X
L
V
V
V
Exit
L
H
X
X
相關PDF資料 |
PDF描述 |
|---|---|
| HY57V651620BLTC-10 | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-10P | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-10S | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-55 | 4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-6 | 4 Banks x 1M x 16Bit Synchronous DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HY57V651620BLTC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4Mx16|3.3V|4K|H|SDR SDRAM - 64M |
| HY57V651620BLTC-10 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-10P | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-10S | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
| HY57V651620BLTC-55 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 1M x 16Bit Synchronous DRAM |
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