- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385426 > HY5DU281622DT-X (Hynix Semiconductor Inc.) 128Mb-S DDR SDRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HY5DU281622DT-X |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 128Mb-S DDR SDRAM |
| 中文描述： | 128Mb的- ? DDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 19/33頁 |
| 文件大?。?/td> | 413K |
| 代理商： | HY5DU281622DT-X |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁當(dāng)前第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁
Rev. 0.0 / Apr. 2003 19
HY5DU28422D(L)T
HY5DU28822D(L)T
HY5DU281622D(L)T
MODE REGISTER SET (MRS)
The mode register is used to store the various operating modes such as /CAS latency, addressing mode, burst length,
burst type, test mode, DLL reset. The mode register is programed via MRS command. This command is issued by the
low signals of /RAS, /CAS, /CS, /WE and BA0. This command can be issued only when all banks are in idle state and
CKE must be high at least one cycle before the Mode Register Set Command can be issued. Two cycles are required to
write the data in mode register. During the MRS cycle, any command cannot be issued. Once mode register field is
determined, the information will be held until resetted by another MRS command.
BA1
BA0
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
0
0
RFU
DR
TM
CAS Latency
BT
Burst Length
A2
A1
A0
Burst Length
Sequential
Interleave
0
0
0
Reserved
Reserved
0
0
1
2
2
0
1
0
4
4
0
1
1
8
8
1
0
0
Reserved
Reserved
1
0
1
Reserved
Reserved
1
1
0
Reserved
Reserved
1
1
1
Reserved
Reserved
A3
Burst Type
0
Sequential
1
Interleave
A6
A5
A4
CAS Latency
0
0
0
Reserved
0
0
1
Reserved
0
1
0
2
0
1
1
3
1
0
0
Reserved
1
0
1
Reserved
1
1
0
2.5
1
1
1
Reserved
A7
Test Mode
0
Normal
1
Test
A8
DLL Reset
0
No
1
Yes
BA0
MRS Type
0
MRS
1
EMRS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5DU28422DLT-X | 128Mb-S DDR SDRAM |
| HY5DU28422DT-X | 128Mb-S DDR SDRAM |
| HY5DU28822DLT-X | 128Mb-S DDR SDRAM |
| HY5DU28822DT-X | 128Mb-S DDR SDRAM |
| HY5DU281622ET | 128M(8Mx16) GDDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DU281622ET | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-25 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-26 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-28 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
| HY5DU281622ET-30 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(8Mx16) GDDR SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。