參數(shù)資料
型號: HY628400A
英文描述: 512Kx8bit CMOS SRAM(512Kx8位 CMOS 靜態(tài)RAM)
中文描述: 512Kx8bit的CMOS的SRAM(512Kx8位的CMOS靜態(tài)RAM)的
文件頁數(shù): 4/9頁
文件大?。?/td> 130K
代理商: HY628400A
HY628400A Series
Rev.03 / Jun. 2000
4
AC CHARACTERISTICS
T
A
= 0
°
C to 70
°
C unless otherwise specified
55ns
70ns
85ns
Min.
Max.
Min.
Max.
Min
Max.
1
2
3
4
5
6
7
8
9
tRC
tAA
tACS
tOE
tCLZ
tOLZ
tCHZ
tOHZ
tOH
WRITE CYCLE
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Deselecting to Output in High Z
Out Disable to Output in High Z
Output Hold from Address Change
55
-
-
-
10
5
0
0
10
-
70
-
-
-
10
5
0
0
10
-
85
-
-
-
10
5
0
0
10
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
55
55
25
-
-
20
20
-
70
70
40
-
-
25
25
-
85
85
45
-
-
30
30
-
10
11
12
13
14
15
16
17
18
19
tWC
tCW
tAW
tAS
tWP
tWR
tWHZ
tDW
tDH
tOW
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
55
45
45
0
40
0
0
25
0
5
-
-
-
-
-
-
70
60
60
0
50
0
0
30
0
5
-
-
-
-
-
-
85
70
70
0
55
0
0
40
0
5
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
-
-
-
25
-
-
-
30
-
-
-
AC TEST CONDITIONS
T
A
= 0
°
C to 70
°
C unless otherwise specified
PARAMETER
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load
Value
0.8V to 2.4V
5ns
1.5V
CL = 100pF + 1TTL Load
AC TEST LOADS
CL(1)
TTL
Note
1. Including jig and scope capacitance
READ CYCLE
Symbol
Parameter
#
Unit
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