參數(shù)資料
型號: HYB 3116400BJ-50
廠商: SIEMENS AG
英文描述: 4M×4-Bit Dynamic RAM(4M×4位 動態(tài) RAM)
中文描述: 4米× 4位動態(tài)隨機存儲器(4米× 4位動態(tài)內(nèi)存)
文件頁數(shù): 7/26頁
文件大小: 138K
代理商: HYB 3116400BJ-50
HYB 5116(7)400BJ-50/-60
HYB 3116(7)400BJ/BT-50/-60
4M
×
4 DRAM
Semiconductor Group
7
1998-10-01
DC Characteristics
(cont’d)
T
A
= 0 to 70
°
C,
V
SS
= 0 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
2k
4k
Common Parameters
Input leakage current
(0 V
V
IH
V
CC
+ 0.3 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
V
OUT
V
CC
+ 0.3 V)
Average
V
CC
supply current
I
I(L)
– 10
10
μ
A
1
I
O(L)
– 10
10
μ
A
1
-50 ns version
-60 ns version
(RAS, CAS, address cycling:
t
RC
=
t
RC MIN.
)
Standby
V
CC
supply current (RAS = CAS =
V
IH
)
Average
V
CC
supply current, during RAS-only refresh
cycles
I
CC1
80
70
50
40
mA
mA
2, 3, 4
2, 3, 4
I
CC2
I
CC3
2
mA
-50 ns version
-60 ns version
(RAS cycling, CAS =
V
IH
,
t
RC
=
t
RC MIN.
)
Average
V
CC
supply current,during fast page mode
80
70
50
40
mA
mA
2, 4
2, 4
-50 ns version
-60 ns version
(RAS =
V
IL
, CAS, address cycling:
t
PC
=
t
PC MIN.
)
Standby
V
CC
supply current
(RAS = CAS =
V
CC
– 0.2 V)
Average
V
CC
supply current, duringCAS-before-RAS
refresh mode
I
CC4
25
20
mA
mA
2, 3, 4
2, 3, 4
I
CC5
1
mA
1
-50 ns version
-60 ns version
(RAS, CAS cycling:
t
RC
=
t
RC MIN.
)
I
CC6
80
70
50
40
mA
mA
2, 4
2, 4
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HYB 3116400BJ-60 4M×4-Bit Dynamic RAM(4M×4位 動態(tài) RAM)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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