參數資料
型號: HYB 3116405BJ-50
廠商: SIEMENS AG
英文描述: 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4位 動態(tài) RAM (4K刷新,超級頁面EDO))
中文描述: 4米× 4位動態(tài)隨機存儲器(4K的刷新,超頁模式-江戶)(4米× 4位動態(tài)隨機存儲器(4K的刷新,超級頁面EDO公司))
文件頁數: 6/28頁
文件大?。?/td> 143K
代理商: HYB 3116405BJ-50
HYB 5116(7)405BJ-50/-60
HYB 3116(7)405BJ/BT(L)-50/-60
4M
×
4 EDO-DRAM
Semiconductor Group
6
1998-10-01
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70 C
Storage temperature range........................................................................................ – 55 to 150 C
Input/output voltage (5 V versions)................................................... – 0.5 to min (
V
CC
+ 0.5, 7.0) V
Input/output voltage (3.3 V versions)................................................ – 0.5 to min (
V
CC
+ 0.5, 4.6) V
Power supply voltage (5 V versions) ....................................................................... – 1.0 V to 7.0 V
Power supply voltage (3.3 V versions) .................................................................... – 1.0 V to 4.6 V
Power dissipation (5 V versions) ............................................................................................ 1.0 W
Power dissipation (3.3 V versions) ......................................................................................... 0.5 W
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70
°
C,
V
SS
= 0 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
5 V Versions
Power supply voltage
V
CC
V
IH
V
IL
V
OH
V
OL
4.5
5.5
V
CC
+ 0.5
0.8
V
Input high voltage
2.4
V
1
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
3.3 V Versions
– 0.5
V
1
2.4
V
1
0.4
V
1
Power supply voltage
V
CC
V
IH
V
IL
V
OH
V
OL
3.0
3.6
V
CC
+ 0.5 V
0.8
V
Input high voltage
2.0
1
Input low voltage
TTL Output high voltage (
I
OUT
= – 2 mA)
TTL Output low voltage (
I
OUT
= 2 mA)
CMOS Output high voltage (
I
OUT
= – 100
μ
A)
V
OH
CMOS Output low voltage (
I
OUT
= 100
μ
A)
– 0.5
V
1
2.4
V
1
V
CC
– 0.2 –
0.4
V
1
V
V
OL
0.2
V
相關PDF資料
PDF描述
HYB 3116405BJ-60 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4位 動態(tài) RAM (4K刷新,超級頁面EDO))
HYB 3116405BT-50 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4位 動態(tài) RAM (4K刷新,超級頁面EDO))
HYB 3116405BT-60 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4位 動態(tài) RAM (4K刷新,超級頁面EDO))
HYB 3116405BTL-50 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4位 動態(tài) RAM (4K刷新,超級頁面EDO))
HYB 3116405BTL-60 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4位 動態(tài) RAM (4K刷新,超級頁面EDO))
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