參數(shù)資料
型號(hào): HYB 3117405BJ-50
廠商: SIEMENS AG
英文描述: 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4位 動(dòng)態(tài) RAM (2K刷新,超級(jí)頁面EDO))
中文描述: 4米× 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器(的2K刷新,超頁模式-江戶)(4米× 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器(2K刷新,超級(jí)頁面EDO公司))
文件頁數(shù): 9/28頁
文件大?。?/td> 143K
代理商: HYB 3117405BJ-50
HYB 5116(7)405BJ-50/-60
HYB 3116(7)405BJ/BT(L)-50/-60
4M
×
4 EDO-DRAM
Semiconductor Group
9
1998-10-01
Access time from column address
t
AA
t
OEA
t
RAL
t
RCS
t
RCH
25
30
ns
8, 10
OE access time
13
15
ns
Column address to RAS lead time
25
30
ns
Read command setup time
0
0
ns
Read command hold time
Read command hold time referenced to RAS
t
RRH
CAS to output in low-Z
0
0
ns
11
0
0
ns
11
t
CLZ
t
OFF
t
OEZ
t
DZC
t
DZO
t
CDD
t
ODD
0
0
ns
8
Output buffer turn-off delay
0
13
0
15
ns
12
Output turn-off delay from OE
0
13
0
15
ns
12
Data to CAS low delay
0
0
ns
13
Data to OE low delay
0
0
ns
13
CAS high to data delay
10
13
ns
14
OE high to data delay
10
13
ns
14
Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
t
RWL
t
CWL
t
DS
t
DH
8
10
ns
Write command pulse width
8
10
ns
Write command setup time
0
0
ns
15
Write command to RAS lead time
8
10
ns
Write command to CAS lead time
8
10
ns
Data setup time
0
0
ns
16
Data hold time
8
10
ns
16
Read-Modify-Write Cycle
Read-write cycle time
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
113
138
ns
RAS to WE delay time
64
77
ns
15
CAS to WE delay time
27
32
ns
15
Column address to WE delay time
39
47
ns
15
OE command hold time
10
13
ns
AC Characteristics
(cont’d)
5, 6
T
A
= 0 to 70
°
C,
V
CC
= 5 V
±
10 % /
V
CC
= 3.3 V
±
0.3 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
min.
max.
min.
max.
相關(guān)PDF資料
PDF描述
HYB 3117405BJ-60 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4位 動(dòng)態(tài) RAM (2K刷新,超級(jí)頁面EDO))
HYB 3117405BT-50 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4位 動(dòng)態(tài) RAM (2K刷新,超級(jí)頁面EDO))
HYB 3117405BT-60 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4位 動(dòng)態(tài) RAM (2K刷新,超級(jí)頁面EDO))
HYB 5116405BJ-50 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4位 動(dòng)態(tài) RAM (4K刷新,超級(jí)頁面EDO))
HYB 5116405BJ-60 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4位 動(dòng)態(tài) RAM (4K刷新,超級(jí)頁面EDO))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3117405BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB3117405BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3117405BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3117405BT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB3117405BT-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh