參數(shù)資料
型號(hào): HYB 3117405BJ-60
廠商: SIEMENS AG
英文描述: 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4位 動(dòng)態(tài) RAM (2K刷新,超級(jí)頁面EDO))
中文描述: 4米× 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器(的2K刷新,超頁模式-江戶)(4米× 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器(2K刷新,超級(jí)頁面EDO公司))
文件頁數(shù): 2/28頁
文件大?。?/td> 143K
代理商: HYB 3117405BJ-60
HYB 5116(7)405BJ-50/-60
HYB 3116(7)405BJ/BT(L)-50/-60
4M
×
4 EDO-DRAM
Semiconductor Group
2
1998-10-01
The HYB 5(3)116(7)405 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized
as 4 194 304 words by 4-bits. The HYB 5(3)116(7)405BJ/BT(L) utilizes a submicron CMOS silicon
gate process technology, as well as advanced circuit techniques to provide wide operating margins,
both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)116(7)405
to be packaged in a standard SOJ-26/24 and TSOPII-26/24 plastic package with 300 mil width.
These packages provide high system bit densities and are compatible with commonly used
automatic testing and insertion equipment. The HYB 3116(7)405BTL have a very low power “sleep
mode” supported by Self Refresh.
Ordering Information
Type
Ordering Code Package
Descriptions
2k-Refresh Versions:
HYB 5117405BJ-50
Q67100-Q1101
P-SOJ-26/24-1 300 mil
5 V 50 ns EDO-DRAM
HYB 5117405BJ-60
Q67100-Q1102
P-SOJ-26/24-1 300 mil
5 V 60 ns EDO-DRAM
HYB 3117405BJ-50
on request
P-SOJ-26/24-1 300 mil
3.3 V 50 ns EDO-DRAM
HYB 3117405BJ-60
on request
P-SOJ-26/24-1 300 mil
3.3 V 60 ns EDO-DRAM
HYB 3117405BT-50
on request
P-TSOPII-26/24-1 300 mil 3.3 V 50 ns EDO-DRAM
HYB 3117405BT-60
on request
P-TSOPII-26/24-1 300 mil 3.3 V 60 ns EDO-DRAM
4k-Refresh Versions:
HYB 5116405BJ-50
Q67100-Q1098
P-SOJ-26/24-1 300 mil
5 V 50 ns EDO-DRAM
HYB 5116405BJ-60
Q67100-Q1099
P-SOJ-26/24-1 300 mil
5 V 60 ns EDO-DRAM
HYB 3116405BJ-50
on request
P-SOJ-26/24-1 300 mil
3.3 V 50 ns EDO-DRAM
HYB 3116405BJ-60
on request
P-SOJ-26/24-1 300 mil
3.3 V 60 ns EDO-DRAM
HYB 3116405BT-50
on request
P-TSOPII-26/24-1 300 mil 3.3 V 50 ns EDO-DRAM
HYB 3116405BT-60
on request
P-TSOPII-26/24-1 300 mil 3.3 V 60 ns EDO-DRAM
HYB 3116405BTL-50 on request
P-TSOPII-26/24-1 300 mil 3.3 V 50 ns LP-EDO-DRAM
HYB 3116405BTL-60 on request
P-TSOPII-26/24-1 300 mil 3.3 V 60 ns LP-EDO-DRAM
相關(guān)PDF資料
PDF描述
HYB 3117405BT-50 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4位 動(dòng)態(tài) RAM (2K刷新,超級(jí)頁面EDO))
HYB 3117405BT-60 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4位 動(dòng)態(tài) RAM (2K刷新,超級(jí)頁面EDO))
HYB 5116405BJ-50 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4位 動(dòng)態(tài) RAM (4K刷新,超級(jí)頁面EDO))
HYB 5116405BJ-60 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4位 動(dòng)態(tài) RAM (4K刷新,超級(jí)頁面EDO))
HYB 5117405BJ-50 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4位 動(dòng)態(tài) RAM (2K刷新,超級(jí)頁面EDO))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3117405BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3117405BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3117405BT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB3117405BT-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB3117405BT-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM