參數(shù)資料
型號: HYB 3117405BT-50
廠商: SIEMENS AG
英文描述: 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4位 動態(tài) RAM (2K刷新,超級頁面EDO))
中文描述: 4米× 4位動態(tài)隨機(jī)存儲器(的2K刷新,超頁模式-江戶)(4米× 4位動態(tài)隨機(jī)存儲器(2K刷新,超級頁面EDO公司))
文件頁數(shù): 7/28頁
文件大?。?/td> 143K
代理商: HYB 3117405BT-50
HYB 5116(7)405BJ-50/-60
HYB 3116(7)405BJ/BT(L)-50/-60
4M
×
4 EDO-DRAM
Semiconductor Group
7
1998-10-01
DC Characteristics
(cont’d)
T
A
= 0 to 70
°
C,
V
SS
= 0 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
2k
4k
Common Parameters
Input leakage current
(0 V
V
IH
V
CC
+ 0.3 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
V
OUT
V
CC
+ 0.3 V)
Average
V
CC
supply current
I
I(L)
– 10
10
μ
A
1
I
O(L)
– 10
10
μ
A
1
-50 version
-60 version
(RAS, CAS, address cycling:
t
RC
=
t
RC MIN.
)
Standby
V
CC
supply current
(RAS = CAS =
V
IH
)
Average
V
CC
supply current, during RAS-only
refresh cycles
I
CC1
80
70
50
40
mA
mA
2, 3, 4
2, 3, 4
I
CC2
2
mA
-50 version
-60 version
(RAS cycling, CAS =
V
IH
,
t
RC
=
t
RC MIN.
)
Average
V
CC
supply current,during hyper page
mode (EDO)
I
CC3
80
70
50
40
mA
mA
2, 4
2, 4
-50 version
-60 version
(RAS =
V
IL
, CAS, address cycling:
t
PC
=
t
PC MIN.
)
Standby
V
CC
supply current
(RAS = CAS =
V
CC
– 0.2 V)
Average
V
CC
supply current, during CAS-
before-RAS refresh mode
I
CC4
35
30
mA
mA
2, 3, 4
2, 3, 4
I
CC5
1
200
mA
μ
A
1
L-version
-50 version
-60 version
(RAS, CAS cycling:
t
RC
=
t
RC MIN.
)
Average Self Refresh current
(CBR cycle with
t
RAS
>
t
RASS MIN.
, CAS held
low, WE =
V
CC
– 0.2 V, Address and
Din =
V
CC
– 0.2 V or 0.2 V)
I
CC6
80
70
50
40
mA
mA
2, 4
2, 4
I
CC7
250
μ
A
L-
version
only
相關(guān)PDF資料
PDF描述
HYB 3117405BT-60 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4位 動態(tài) RAM (2K刷新,超級頁面EDO))
HYB 5116405BJ-50 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4位 動態(tài) RAM (4K刷新,超級頁面EDO))
HYB 5116405BJ-60 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4位 動態(tài) RAM (4K刷新,超級頁面EDO))
HYB 5117405BJ-50 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4位 動態(tài) RAM (2K刷新,超級頁面EDO))
HYB 5117405BJ-60 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4位 動態(tài) RAM (2K刷新,超級頁面EDO))
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