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參數(shù)資料
| 型號： | HYB 314175BJ-60 |
| 廠商： | SIEMENS AG |
| 英文描述： | 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出（EDO)動態(tài)RAM) |
| 中文描述： | 3.3V的256畝× 16位江戶的DRAM（3.3 256K × 16位外延式數(shù)據(jù)輸出（EDO公司）動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 2/24頁 |
| 文件大?。?/td> | 1307K |
| 代理商： | HYB 314175BJ-60 |
HYB 314175BJ/BJL-50/-55/-60
3.3V 256K x 16 EDO-DRAM
Semiconductor Group
2
Ordering Information
Type
HYB 314175BJ-50
Truth Table
Pin Names
Ordering Code
Q67100 - Q2148
Package
P-SOJ-40-1
Description
3.3 V 50 ns 256 Kx16 EDO-DRAM
HYB 314175BJ-55
on request
P-SOJ-40-1
3.3 V 55 ns 256 Kx16 EDO-DRAM
HYB 314175BJ-60
Q67100 - Q2149
P-SOJ-40-1
3.3 V 60 ns 256 Kx16 EDO-DRAM
HYB 314175BJL-50
on request
P-SOJ-40-1
3.3 V 50 ns 256 Kx16 EDO- DRAM
HYB 314175BJL-55
on request
P-SOJ-40-1
3.3 V 55 ns 256 Kx16 EDO- DRAM
HYB 314175BJL-60
on request
P-SOJ-40-1
3.3 V 60 ns 256 Kx16 EDO-DRAM
RAS
LCAS
UCAS
WE
OE
I/O1-I/O8
I/O9-I/O16
Operation
H
L
L
L
L
L
L
L
L
H
H
L
H
L
L
H
L
L
H
H
H
L
L
H
L
L
L
H
H
H
H
H
L
L
L
H
H
H
L
L
L
H
H
H
H
High-Z
High-Z
Dout
High-Z
Dout
Din
Don't care
Din
High-Z
High-Z
High-Z
High-Z
Dout
Dout
Don't care
Din
Din
High-Z
Standby
Refresh
Lower byte read
Upper byte read
Word read
Lower byte write
Upper byte write
Word write
A0-A8
Address Inputs
RAS
Row Address Strobe
UCAS, LCAS
Column Address Strobe
WE
Read/Write Input
OE
Output Enable
I/O1 – I/O16
V
CC
V
SS
N.C.
Data Input/Output
Power Supply (+ 3.3 V)
Ground (0 V)
No Connection
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 314175BJL-50 | 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出（EDO)動態(tài)RAM) |
| HYB 314175BJL-55 | 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出（EDO)動態(tài)RAM) |
| HYB 314175BJL-60 | 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數(shù)據(jù)輸出（EDO)動態(tài)RAM) |
| HYB314175BJ-50 | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJL-50 | 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314175BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJL-55 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314175BJL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
| HYB314265BJ-45 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256K x 16-Bit EDO-Dynamic RAM |
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