參數(shù)資料
型號(hào): HYB 5118160BSJ-50
廠商: SIEMENS AG
英文描述: 1M×16-Bit Dynamic RAM(1M×16位 動(dòng)態(tài)RAM(快速頁(yè)面模式))
中文描述: 100萬(wàn)× 16位動(dòng)態(tài)隨機(jī)存儲(chǔ)器(100萬(wàn)× 16位動(dòng)態(tài)隨機(jī)存儲(chǔ)器(快速頁(yè)面模式))
文件頁(yè)數(shù): 9/24頁(yè)
文件大?。?/td> 191K
代理商: HYB 5118160BSJ-50
HYB 5118160BSJ-50/-60
HYB 3118160BSJ-50/-60
1M
×
16 DRAM
Semiconductor Group
9
1998-10-01
Access time from CAS precharge
t
CPA
t
RAS
t
RHPC
30
35
ns
7
RAS pulse width
50
200k
60
200k
ns
CAS precharge to RAS Delay
30
35
ns
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle time
t
PRWC
t
CPWD
71
80
ns
CAS precharge to WE
48
55
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
t
WRH
10
10
ns
CAS hold time
10
10
ns
RAS to CAS precharge time
5
5
ns
Write to RAS precharge time
10
10
ns
Write hold time referenced to RAS
10
10
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t
CPT
35
40
ns
AC Characteristics
(cont’d)
5, 6
T
A
= 0 to 70
°
C,
V
CC
= 5 V
±
10 % /
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min.
max. min.
max.
相關(guān)PDF資料
PDF描述
HYB 5118160BSJ-60 1M×16-Bit Dynamic RAM(1M×16位 動(dòng)態(tài)RAM(快速頁(yè)面模式))
HYB5118160BSJ-50- 1M x 16-Bit Dynamic RAM 1k Refresh
HYB 314100BJ-50 4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1位 動(dòng)態(tài) RAM(快速頁(yè)面模式))
HYB314100BJ-50 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314100BJBJL-50- 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB5118160BSJ-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM
HYB5118160BSJ-50- 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118160BSJ-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118160BSJ-70 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM
HYB5118165BJ-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k Refresh