參數(shù)資料
型號： HYB18T1G400AFL-3
廠商： INFINEON TECHNOLOGIES AG
英文描述： 1 Gbit DDR2 SDRAM
中文描述： 1千兆位DDR2內(nèi)存
文件頁數(shù)： 25/89頁
文件大?。?/td> 1752K
代理商： HYB18T1G400AFL-3
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
INFINEON Technologies
Page 25 Rev. 1.02 May 2004
ODT Timing for Active and Standby
(Idle) Modes
(Synchronous ODT timings)
ODT Timing for Precharge Power-Down and Active Power-Down Mode (with slow exit)
(Asynchronous ODT timings)
3) ODT turn off time min. (tAOF,min) is when the device starts to turn off the ODT resistance.ODT turn off time max. (tAOF,max) is
when the bus is in high impedance. Both are measured from tAOFD.
1) Synchronous ODT timings apply for Active Mode and Standby Mode with CKE “high” and for the “Fast Exit” Active Power Down
Mode (MRS bit A12 set to “0”).
In all these modes the on-die DLL is enabled.
2) ODT turn-on time (tAON,min) is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on
time max. (tAON,max) is when the ODT resistance is fully on. Both are measured from tAOND.
CKE
DQ
ODT01
ODT
CK, CK
see note 1
Rtt
tAOF(min)
tAON(min)
tAON(max)
tAOF(max)
tAOND (2 tck)
tAOFD (2.5 tck)
t
IS
t
IS
T0
T1
T2
T3
T4
T5
T6
T7
T8
1) Asynchronous ODT timings apply for Precharge Power-Down Mode and “Slow Exit” Active Power Down Mode (MRS bit A12 set to
“1”), where the on-die DLL is disabled in this mode of operation.
tAOFPD,min
tAOFPD,max
CKE
DQ
ODT
ODT02
CK, CK
"low"
T0
T1
T2
T3
T4
T5
T6
T7
T8
t
IS
t
IS
Rtt
tAONPD,min
tAONPD,max
相關(guān)PDF資料
PDF描述
HYB18T1G160AFL-3 1 Gbit DDR2 SDRAM
HYB18T1G400AFL-37 1 Gbit DDR2 SDRAM
HYB18T1G160AFL-37 1 Gbit DDR2 SDRAM
HYB18T1G400AFL-3S 1 Gbit DDR2 SDRAM
HYB18T1G160AFL-3S 1 Gbit DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T1G800BF-3S 功能描述:IC DDR2 SDRAM 1GBIT 68TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB18T256400AF-3.7 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60
HYB18T256400AF-5 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA
HYB18T256800AF-5 制造商:Infineon Technologies AG 功能描述:
HYB18T512161BF-25 制造商:Qimonda 功能描述:SDRAM, DDR, 32M x 16, 84 Pin, Plastic, BGA
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