參數(shù)資料
型號： HYB18T1G800AF
廠商： INFINEON TECHNOLOGIES AG
英文描述： 1 Gbit DDR2 SDRAM
中文描述： 1千兆位DDR2內(nèi)存
文件頁數(shù)： 66/89頁
文件大?。?/td> 1752K
代理商： HYB18T1G800AF
Page 66 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
5.2.3 Differential DC and AC Input and Output Logic Levels
Symbol
Parameter
min.
max.
Units
Notes
VIN(dc)
DC input signal voltage
-0.3
VDDQ + 0.3
1
VID(dc)
DC differential input voltage
0.25
VDDQ + 0.6
2
VID(ac)
AC differential input voltage
0.5
VDDQ + 0.6
V
3
VIX(ac)
AC differential cross point input voltage
0.5 * VDDQ - 0.175
0.5 * VDDQ + 0.175
V
4
VOX(ac)
AC differential cross point output voltage
0.5 * VDDQ - 0.125
0.5 * VDDQ + 0.125
V
5
notes:
1) VIN(dc) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS etc.
2) VID(dc) specifies the input differential voltage VTR - VCP required for switching. The minimum value is equal to VIH(dc) - VIL(dc).
3) VID(ac) specifies the input differential voltage VTR - VCP required for switching. The minimum value is equal to VIH(ac) - VIL(ac).
4) The value of VIX(ac) is expected to equal 0.5 x VDDQ of the transmitting device and VIX(ac) is expected to track variations in VDDQ.
VIX(ac) indicates the voltage at which differential input signals must cross.
5) The value of VOX(ac) is expected to equal 0.5 x VDDQ of the transmitting device and VOX(ac) is expected to track variations in
VDDQ. VOX(ac) indicates the voltage at which differential input signals must cross.
Crossing Point
VDDQ
VSSQ
VID
VIX or VOX
VTR
VCP
SSTL18_3
相關(guān)PDF資料
PDF描述
HYB18T1G400AFL-3 1 Gbit DDR2 SDRAM
HYB18T1G160AFL-3 1 Gbit DDR2 SDRAM
HYB18T1G400AFL-37 1 Gbit DDR2 SDRAM
HYB18T1G160AFL-37 1 Gbit DDR2 SDRAM
HYB18T1G400AFL-3S 1 Gbit DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T1G800BF-3S 功能描述:IC DDR2 SDRAM 1GBIT 68TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB18T256400AF-3.7 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60
HYB18T256400AF-5 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA
HYB18T256800AF-5 制造商:Infineon Technologies AG 功能描述:
HYB18T512161BF-25 制造商:Qimonda 功能描述:SDRAM, DDR, 32M x 16, 84 Pin, Plastic, BGA
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