- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370781 > HYB18T1G800AFL-3 (INFINEON TECHNOLOGIES AG) 1 Gbit DDR2 SDRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HYB18T1G800AFL-3 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 1 Gbit DDR2 SDRAM |
| 中文描述： | 1千兆位DDR2內(nèi)存 |
| 文件頁(yè)數(shù)： | 76/89頁(yè) |
| 文件大?。?/td> | 1752K |
| 代理商： | HYB18T1G800AFL-3 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)當(dāng)前第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)
Page 76 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
tRP(A)
Precharge-All (8 banks) command period
tRP+1tCK
-
tRP+1tCK
-
ns
22
tRRD
Active bank A to Active bank B com-
mand period
x4 & x8
(1k page size)
7.5
-
7.5
-
ns
23
x16 (2k page size)
10
-
10
-
ns
tFAW
Four Activate Window period
x4 & x8
(1k page size)
37.5
-
37.5
-
ns
x16 (2k page size)
50
-
50
-
ns
tCCD
CAS A to CAS B Command Period
2
2
tCK
tWR
Write recovery time
15
-
15
-
ns
tDAL
Auto-Precharge write recovery + precharge time
WR+tRP
-
WR+tRP
-
tCK
14
tWTR
Internal Write to Read command delay
10
-
7.5
-
ns
15
tRTP
Internal Read to Precharge command delay
7.5
-
7.5
-
ns
tXARD
Exit power down to any valid command
(other than NOP or Deselect)
2
-
2
-
tCK
16
tXARDS
Exit active power-down mode to Read command
(slow exit, lower power)
6 - AL
-
6 - AL
-
tCK
16
tXP
Exit precharge power-down to any valid command
(other than NOP or Deselect)
2
-
2
-
tCK
tXSRD
Exit Self-Refresh to Read command
200
-
200
-
tCK
tXSNR
Exit Self-Refresh to non-Read command
tRFC+10
-
tRFC+10
-
ns
tCKE
CKE minimum high and low pulse width
3
-
3
-
tCK
tREFI
Average periodic refresh Interval
0
o
C - 85
o
C
-
7.8
-
7.8
μs
19
85
o
C - 95
o
C
-
3.9
-
3.9
μs
tOIT
OCD drive mode output delay
0
12
0
12
ns
tDELAY
Minimum time clocks remain ON after CKE asynchro-
nously drops LOW
tIS+tCK+tIH
-
tIS+tCK+tIH
-
ns
17
Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be
powered down and then restarted through the specified initialization sequence before normal operation can continue.
7.1 Timing Parameter by Speed Grade- DDR2-400 & DDR2-533
(VDDQ = 1.8V
±
0.1V; VDD = 1.8V
±
0.1V) (notes 1-4)
Symbol
Parameter
-5
DDR2-400-333
-3.7
DDR2-533-444
Unit
Notes
min.
max
min.
max
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB18T1G800AFL-37 | 1 Gbit DDR2 SDRAM |
| HYB18T1G800AFL-3S | 1 Gbit DDR2 SDRAM |
| HYB18T1G800AFL-5 | 1 Gbit DDR2 SDRAM |
| HYB18T1G800TC-3 | MEMORY SPECTRUM |
| HYB18T1G800TC-37 | MEMORY SPECTRUM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18T1G800BF-3S | 功能描述:IC DDR2 SDRAM 1GBIT 68TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁(yè)面:1449 (CN2011-ZH PDF) |
| HYB18T256400AF-3.7 | 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60 |
| HYB18T256400AF-5 | 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA |
| HYB18T256800AF-5 | 制造商:Infineon Technologies AG 功能描述: |
| HYB18T512161BF-25 | 制造商:Qimonda 功能描述:SDRAM, DDR, 32M x 16, 84 Pin, Plastic, BGA |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。