參數(shù)資料
型號(hào)： HYB18T512160AF-5
廠商： INFINEON TECHNOLOGIES AG
英文描述： 512-Mbit Double-Data-Rate-Two SDRAM
中文描述： 512兆雙數(shù)據(jù)速率2內(nèi)存
文件頁(yè)數(shù)： 27/28頁(yè)
文件大?。?/td> 2148K
代理商： HYB18T512160AF-5
27
On our Internet websites:
www.infineon.com/memory and www.infineon.com/memory/flash
C
Datasheets
C
Simulation models
C
Memory Spectrum (PDF version)
C
Brochures (PDF version)
More detailed Information on
Memory Products is available:
Edition 2004 April
Published by
Infineon Technologies AG,
St.-Martin-Strae 53,
D-81669 München
Infineon Technologies AG 2004.
All Rights Reserved.
Please note
The information in this document is subject to change
without notice. The information herein describes certain
components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but
not limited to warranties of non-infringement regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices, please contact your nearest
Infineon Technologies office in Germany or our Infineon
Technologies representatives worldwide.
(www.infineon.com).
Warnings
Due to technical requirements, components may contain
dangerous substances. For information on the types
in question, please contact your nearest Infineon
Technologies office.
Infineon Technologies components may only be used in
life-support devices or systems with the express written
approval of Infineon Technologies if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life-support devices or systems are intended to be
implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they
fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
相關(guān)PDF資料
PDF描述
HYB18RL25632AC 256 Mbit DDR Reduced Latency DRAM
HYB25S128160TCL-5 MEMORY SPECTRUM
HYB25S128160TCL-7 MEMORY SPECTRUM
HYB25S128160TCL-75 MEMORY SPECTRUM
HYB25S128160TCL-7F MEMORY SPECTRUM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18T512161BF-25 制造商:Qimonda 功能描述:SDRAM, DDR, 32M x 16, 84 Pin, Plastic, BGA
HYB18T512400AF-5 制造商:Intersil Corporation 功能描述:SDRAM, DDR, 128M x 4, 60 Pin, Plastic, BGA
HYB18T512400BF-3S 制造商:Qimonda 功能描述:
HYB18T512800AF-3S 制造商:Qimonda 功能描述: 制造商:Infineon Technologies AG 功能描述:32M X 16 DDR DRAM, 0.45 ns, PBGA84
HYB18T512800BF-2.5 功能描述:IC DDR2 SDRAM 512MBIT 60TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁(yè)面:1449 (CN2011-ZH PDF)
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