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參數(shù)資料
| 型號： | HYB25L256160AF |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 256MBit Mobile-RAM |
| 中文描述： | 片256Mbit移動- RAM的 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 569K |
| 代理商： | HYB25L256160AF |
M A N U F A C T U R E R S A R E C H A L L E N G E D to lower core and I/O voltage in order to further reduce power
consumption. Compared with the 2.5 V technology previously in use, Infineon’s next-generation 1.8 V technology meets
these demands by cutting power consumption by approximately 40 %.
T H E M A R K E T I S A L S O C A L L I N G for a reduction in harmful substances, the elimination of lead in chips
and easier recycling. Infineon is one of the first manufacturers to offer Mobile-RAM chips in green packages.
I N A N T I C I PA T I O N O F R I S I N G demand for cost-optimized multi-chip solutions, (combining flash and
Mobile-RAM) Infineon will also soon be introducing a pre-tested Known Good Die (KGD) / wafer solution.
A N D T O R E D U C E P OW E R consumption even further, Infineon plans to switch its Mobile-RAM devices from
SDR to DDR speeds. Due to be launched in the near future. For more details, please contact your local sales representative.
Ahead of the Trend
Industry-wide Standard
I N F I N E O N W O R K E D C L O S E LY with its industry partners to standardize the low-power features and
54-ball FBGA package for Mobile-RAM through JEDEC (Joint Electron Device Engineering Council), the semiconductor
engineering standardization body of EIA (Electronic Industry Alliance). Information on controller and ASIC vendors that
support the new Mobile-RAM feature set standard is available on request.
F O R T H E L A T E S T I N F O R M A T I O N and datasheet updates on Mobile-RAM, visit our website at
www.infineon.com/memory/Mobile-RAM
Voltage
conversion
Trend towards
green package
Trend towards
KGD
Trend towards
DDR
Source: IFX
2003
DDR
SDR
3.3 V
2004
2005
1.8 V
2.5 V
Known Good Die
BGA
TSOP
FGBA
相關PDF資料 |
PDF描述 |
|---|---|
| HYB25L256160AF-75 | 256MBit Mobile-RAM |
| HYB39L256160AC | 256 MBit Synchronous Low-Power DRAM |
| HYB39L256160AC-8 | 256 MBit Synchronous Low-Power DRAM |
| HYB39L256160AT-8 | 256 MBit Synchronous Low-Power DRAM |
| HYB39L256160AC-7.5 | BENCH MOUNTED CRIMP MACHINE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB25L512160AC-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HYB3116160BSJ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
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