參數(shù)資料
型號(hào): HYB3116400BJ-70
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3V 4M x 4-Bit Dynamic RAM
中文描述: 4M X 4 FAST PAGE DRAM, 70 ns, PDSO24
文件頁(yè)數(shù): 10/26頁(yè)
文件大小: 253K
代理商: HYB3116400BJ-70
Semiconductor Group
10
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
CAS precharge to RAS Delay
t
RHPC
30
35
40
ns
Fast Page Mode Read-Modify-Write Cycle
Fast page mode read-write cycle
time
t
PRWC
71
80
95
ns
CAS precharge to WE
t
CPWD
48
55
65
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
10
10
10
ns
CAS hold time
10
10
10
ns
RAS to CAS precharge time
5
5
5
ns
Write to RAS precharge time
10
10
10
ns
Write hold time referenced to RAS
t
WRH
10
10
10
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time
t
CPT
35
40
40
ns
Test Mode
CAS hold time
t
CHRT
t
WTS
t
WTH
30
30
30
ns
Write command setup time
10
10
10
ns
Write command hold time
10
10
10
ns
Self Refresh Cycle
RAS pulse width
t
RASS
t
RPS
t
CHS
100k
_
100k
_
100k
_
ns
17
RAS precharge time
95
_
110
_
130
_
ns
17
CAS hold time
-50
_
-50
_
-50
_
ns
17
AC Characteristics
(cont’d)
5)6)
16F
T
A
= 0 to 70 °C,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
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參數(shù)描述
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