參數(shù)資料
型號: HYB3116400BJBTL-50-
廠商: SIEMENS AG
英文描述: 3.3V 4M x 4-Bit Dynamic RAM
中文描述: 3.3 4米× 4位動態(tài)隨機存儲器
文件頁數(shù): 5/26頁
文件大小: 253K
代理商: HYB3116400BJBTL-50-
Semiconductor Group
5
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Block Diagram for HYB3116400
No. 2 Clock
Generator
Column
Address
Buffer(10)
Refresh
Controller
Refresh
Counter (12)
Address
Buffers(12)
Row
No. 1 Clock
Generator
&
Data in
Buffer
Data out
Buffer
Column
Decoder
Sense Amplifier
I/O Gating
Memory Array
4096x1024x4
Row
Decoder
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
WE
CAS
4096
1024
x4
.
RAS
10
12
10
4
4
4
I/O1 I/O2 I/O3 I/O4
OE
12
12
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HYB3116400BJ-60 RES 10K-OHM 5% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
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相關代理商/技術參數(shù)
參數(shù)描述
HYB3116400BT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB3116400BT-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BT-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BTL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BTL-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM