參數(shù)資料
型號: HYB3116400BT-50
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3V 4M x 4-Bit Dynamic RAM
中文描述: 4M X 4 FAST PAGE DRAM, 50 ns, PDSO26
封裝: 0.300 INCH, PLASTIC, TSOP-26
文件頁數(shù): 21/26頁
文件大?。?/td> 253K
代理商: HYB3116400BT-50
Semiconductor Group
21
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
CAS-Before-RAS Refresh Cycle
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t
RP
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RAS
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CRP
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CP
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RPC
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CHR
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WRH
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WRP
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CSR
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RPC
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OFF
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OEZ
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CDD
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ODD
VIH
VIL
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VIL
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VIL
VIH
VIL
VIH
VIL
HI-Z
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“H” or “L”
RAS
I/O
(Outputs)
I/O
(Inputs)
OE
WE
CAS
VOH
VOL
WL10
相關(guān)PDF資料
PDF描述
HYB3116400BTL-60 3.3V 4M x 4-Bit Dynamic RAM
HYB3164160AT-60 4M x 16-Bit Dynamic RAM
HYB3165160AT-60 4M x 16-Bit Dynamic RAM
HYB3166160AT-60 4M x 16-Bit Dynamic RAM
HYB3164160AT 4M x 16-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3116400BT-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BT-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BTL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BTL-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM
HYB3116405BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM