參數(shù)資料
型號: HYB3116400BTL-70
廠商: SIEMENS A G
元件分類: DRAM
英文描述: RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA
中文描述: 4M X 4 FAST PAGE DRAM, 70 ns, PDSO24
文件頁數(shù): 14/26頁
文件大?。?/td> 253K
代理商: HYB3116400BTL-70
Semiconductor Group
14
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
Write Cycle (OE Controlled Write)
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Valid Data
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t
RWL
t
WP
t
OEH
t
ODD
CWL
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t
DZO
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OEA
t
CLZ
t
DS
t
OEZ
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RC
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VIH
VIL
Row
t
DZC
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“H” or “L”
Hi-Z
Hi-Z
Column
Row
t
ASC
t
RAD
t
RAL
t
CAH
t
RAH
RAS
CAS
Address
WE
OE
I/O
(Inputs)
I/O
(Outputs)
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
t
RCD
.
t
RAS
t
CSH
t
CAS
t
RP
t
CRP
t
RSH
t
ASR
t
ASR
WL3
相關PDF資料
PDF描述
HYB3117400BJ-70 3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BJ-70 3.3V 4M x 4-Bit Dynamic RAM
HYB3117400BJ-60 Driver IC; Number of Drivers:8; Package/Case:18-DIP; Driver Type:Darlington; Output Current:750mA; Mounting Type:Through Hole; Supply Voltage:5V
HYB3117400BT-50 3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BT-50 3.3V 4M x 4-Bit Dynamic RAM
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