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參數(shù)資料
| 型號： | HYB3117400BJ-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | Driver IC; Number of Drivers:8; Package/Case:18-DIP; Driver Type:Darlington; Output Current:750mA; Mounting Type:Through Hole; Supply Voltage:5V |
| 中文描述： | 4M X 4 FAST PAGE DRAM, 60 ns, PDSO26 |
| 封裝： | 0.300 INCH, PLASTIC, SO-26 |
| 文件頁數(shù)： | 8/26頁 |
| 文件大?。?/td> | 253K |
| 代理商： | HYB3117400BJ-60 |
Semiconductor Group
8
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
AC Characteristics
5)6)
16F
T
A
= 0 to 70 °C,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
common parameters
Random read or write cycle time
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
90
–
110
–
130
–
ns
RAS precharge time
30
–
40
–
50
–
ns
RAS pulse width
50
10k
60
10k
70
10k
ns
CAS pulse width
13
10k
15
10k
20
10k
ns
Row address setup time
0
–
0
–
0
–
ns
Row address hold time
Column address setup time
8
0
–
–
10
0
–
–
10
0
–
–
ns
ns
Column address hold time
10
–
15
–
15
–
ns
RAS to CAS delay time
18
37
20
45
20
50
RAS to column address delay
time
13
25
15
30
15
35
ns
RAS hold time
CAS hold time
t
RSH
t
CSH
t
CRP
t
T
t
REF
t
REF
t
REF
13
50
15
60
–
–
20
70
–
–
ns
ns
CAS to RAS precharge time
5
–
5
–
5
–
ns
Transition time (rise and fall)
3
50
3
50
3
50
ns
7
Refresh period for HYB3117400
–
32
–
32
–
32
ms
Refresh period for HYB3116400
–
64
–
64
–
64
ms
Refresh period for L-version
–
256
–
256
–
256
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
–
50
–
60
–
70
ns
8, 9
Access time from CAS
–
13
–
15
–
20
ns
8, 9
Access time from column address
t
AA
OE access time
–
25
–
30
–
35
ns
8,10
t
OEA
–
13
–
15
–
20
ns
Column address to RAS lead time
t
RAL
Read command setup time
25
–
30
–
35
–
ns
t
RCS
t
RCH
t
RRH
0
–
0
–
0
–
ns
Read command hold time
0
–
0
–
0
–
ns
11
Read command hold time
referenced to RAS
0
–
0
–
0
–
ns
11
相關PDF資料 |
PDF描述 |
|---|---|
| HYB3117400BT-50 | 3.3V 4M x 4-Bit Dynamic RAM |
| HYB3116400BT-50 | 3.3V 4M x 4-Bit Dynamic RAM |
| HYB3116400BTL-60 | 3.3V 4M x 4-Bit Dynamic RAM |
| HYB3164160AT-60 | 4M x 16-Bit Dynamic RAM |
| HYB3165160AT-60 | 4M x 16-Bit Dynamic RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3117400BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM |
| HYB3117400BT-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM |
| HYB3117400BT-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM |
| HYB3117400BT-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM |
| HYB3117405BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
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