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參數(shù)資料
| 型號： | HYB314171BJ-50- |
| 廠商： | SIEMENS AG |
| 英文描述： | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| 中文描述： | 3.3V的256畝x 16位動態(tài)隨機存儲器3.3V低功耗256畝x 16位動態(tài)隨機存儲器的自刷新 |
| 文件頁數(shù)： | 8/24頁 |
| 文件大?。?/td> | 1339K |
| 代理商： | HYB314171BJ-50- |
HYB 314171BJ/BJL-50/-60/-70
3.3V 256 K x 16-DRAM
Semiconductor Group
8
Output buffer turn-off delay from
CAS
t
OFF
0
15
0
20
0
20
ns
12
Output buffer turn-off delay from
OE
t
OEZ
0
15
0
20
0
20
ns
12
Data to OE low delay
t
DZO
t
CDD
t
ODD
0
–
0
–
0
–
ns
13
CAS high to datadelay
15
–
20
–
20
–
ns
14
OE high to data delay
15
-
20
–
20
–
ns
14
Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
10
–
10
–
15
–
ns
Write command pulse width
10
–
10
–
15
–
ns
Write command setup time
Write command to RAS lead time
t
RWL
Write command to CAS lead time
t
CWL
Data setup time
0
–
0
–
0
–
ns
15
15
–
15
–
20
–
ns
15
–
15
–
20
–
ns
t
DS
t
DH
t
DZC
0
–
0
–
0
–
ns
16
Data hold time
10
–
15
–
15
–
ns
16
Data to CAS lowdelay
0
–
0
–
0
–
ns
13
Read-modify-Write Cycle
Read-write cycle time
t
RWC
t
RWD
t
CWD
t
AWD
140
–
160
–
185
–
ns
RAS to WE delay time
75
–
90
–
100
–
ns
15
CAS to WE delay time
40
–
45
–
50
–
ns
15
Column address to WE delay
time
50
–
60
–
65
–
ns
15
OE command hold time
t
OEH
15
–
20
–
20
–
ns
Fast Page Mode Cycle
Fast page mode cycle time
t
PC
t
CP
35
–
40
–
45
–
ns
CAS precharge time
Access time from CAS precharge
t
CPA
RAS pulse width
10
–
10
–
10
–
ns
–
30
–
35
–
40
ns
7
t
RASP
t
RHCP
50
200k
60
200k
70
200k
ns
RAS hold time from CAS
precharge
30
–
35
–
40
–
ns
Parameter
Symbol
Limit Values
Unit
Note
-50
- 60
- 70
min.
max. min.
max. min.
max.
相關PDF資料 |
PDF描述 |
|---|---|
| HYB314171BJ-60 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-70 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJL-50 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJL-60 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJL-70 | 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB314171BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
| HYB314171BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
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