參數(shù)資料
型號: HYB3164165T-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO54
文件頁數(shù): 7/30頁
文件大小: 391K
代理商: HYB3164165T-60
Semiconductor Group
37
HYB3164(5)165T(L)-50/-60
4M x 16 EDO-DRAM
Absolute Maximum Ratings
Operating temperature range..............................................................................................0 to 70 C
Storage temperature range.........................................................................................– 55 to 150 C
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
Note
Stresses above those listed under Absolute Maximum Ratings“ may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may effect device
reliability.
DC Characteristics
T
A
= 0 to 70 C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V, (values in brackets for HYB 3165165J/T)
Parameter
Symbol
Limit Values
Unit Note
min.
max.
Input high voltage
V
IH
V
IL
V
OH
2.0
Vcc+0.3
V
1)
Input low voltage
– 0.3
0.8
V
1)
Output high voltage (LVTTL)
Output H“ level voltage (Iout = -2mA)
2.4
V
Output low voltage (LVTTL)
Output L“l(fā)evel voltage (Iout = +2mA)
V
OL
0.4
V
Output high voltage (LVCMOS)
Output H“ level voltage (Iout = -100uA)
V
OH
Vcc-0.2 -
V
Ouput low voltage (LVCMOS)
Output L“ level voltage (Iout = +100uA)
V
OL
-
0.2
V
Input leakage current,any input
(0 V < Vin < Vcc , all other pins = 0 V
I
I(L)
– 2
2
μ
A
Output leakage current
(DO is disabled, 0 V < Vout < Vcc )
I
O(L)
– 2
2
μ
A
Average Vcc supply current:
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
Standby Vcc supply current
(RAS=CAS= Vih)
I
CC1
110 (140)
100 (120)
mA
mA
2) 3) 4)
I
CC2
2
mA
相關(guān)PDF資料
PDF描述
HYB3164165T High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70
HYB3164165T-50 4M x 16-Bit Dynamic RAM
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HYB3164405J-50 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:31; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
HYB3165405J-50 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:31; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
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