參數(shù)資料
型號(hào)： HYB3164165TL-50
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 4M x 16-Bit Dynamic RAM
中文描述： 4M X 16 EDO DRAM, 50 ns, PDSO54
文件頁(yè)數(shù)： 2/30頁(yè)
文件大小： 391K
代理商： HYB3164165TL-50
Semiconductor Group
32
HYB3164(5)165T(L)-50/-60
4M x 16 EDO-DRAM
This HYB3164(5)165 is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is
fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process
technology. The circuit and process design allow this device to achieve high performance and low
power dissipation. The HYB3164(5)165 operates with a single 3.3 +/-0.3V power supply and
interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the
HYB3164(5)165 to be packaged in a 500mil wide TSOPII-54 plastic package. These packages
provide high system bit densities and are compatible with commonly used automatic testing and
insertion equipment.The HYB3164(5)165TL parts have a very low power sleep mode“ supported
by Self Refresh.
Ordering Information
Pin Names
Type
Ordering
Code
Package
Descriptions
HYB 3164165T-50
on request
P-TSOPII-54-1 500 mil
EDO-DRAM (access time 50 ns)
HYB 3164165T-60
on request
P-TSOPII-54-1 500 mil
EDO-DRAM (access time 60 ns)
HYB 3164165TL-50
on request
P-TSOPII-54-1 500 mil
EDO-DRAM (access time 50 ns)
HYB 3164165TL-60
on request
P-TSOPII-54-1 500 mil
EDO-DRAM (access time 60 ns)
HYB 3165165T-50
on request
P-TSOPII-54-1 500 mil
EDO-DRAM (access time 50 ns)
HYB 3165165T-60
on request
P-TSOPII-54-1 500 mil
EDO-DRAM (access time 60 ns)
HYB 3165165TL-50
on request
P-TSOPII-54-1 500 mil
EDO-DRAM (access time 50 ns)
HYB 3165165TL-60
on request
P-TSOPII-54-1 500 mil
EDO-DRAM (access time 60 ns)
A0-A12
Address Inputs for HYB 3164165T(L)
A0-A11
Address Inputs for HYB 3165165T(L)
RAS
Row Address Strobe
OE
Output Enable
I/O1-I/O16
Data Input/Output
UCAS, LCAS
Column Address Strobe
WRITE
Read/Write Input
Vcc
Power Supply ( + 3.3V)
Vss
Ground
相關(guān)PDF資料
PDF描述
HYB3164165TL-60 4M x 16-Bit Dynamic RAM
HYB3164165T-60 4M x 16-Bit Dynamic RAM
HYB3164165T High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70
HYB3164165T-50 4M x 16-Bit Dynamic RAM
HYB3164400J 16M x 4-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3164165TL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3164400AJ 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3164400AJ-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3164400AJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3164400AJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
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