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參數資料
| 型號： | HYB3164405AT-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 16M x 4-Bit Dynamic RAM |
| 中文描述： | 16M X 4 EDO DRAM, 60 ns, PDSO32 |
| 文件頁數： | 2/32頁 |
| 文件大小： | 473K |
| 代理商： | HYB3164405AT-60 |
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Semiconductor Group
90
HYB3164(5)405J/T(L)-50/-60
16M x 4-DRAM
This HYB3164(5)405 is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is
fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process
technology. The circuit and process design allow this device to achieve high performance and low
power dissipation. The HYB3164(5)405 operates with a single 3.3 +/-0.3V power supply and
interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB
3164(5)400J/T to be packaged in a 500mil wide SOJ-34 or TSOP-34 plastic package. These
packages provide high system bit densities and are compatible with commonly used automatic
testing and insertion equipment.The HYB3164(5)405TL parts have a very low power sleep mode“
supported by Self Refresh.
Ordering Information
Pin Names
Type
Ordering
Code
on request
Package
Descriptions
HYB 3164405J-50
P-SOJ-34-1 500 mil DRAM (access time 50 ns)
HYB 3164405J-60
on request
P-SOJ-34-1 500 mil DRAM (access time 60 ns)
HYB 3164405T-50
on request
P-TSOPII-34-1 500 mil DRAM (access time 50 ns)
HYB 3164405T-60
on request
P-TSOPII-34-1 500 mil DRAM (access time 60 ns)
HYB 3164405TL-50
on request
P-TSOPII-34-1 500 mil DRAM (access time 50 ns)
HYB 3164405TL-60
on request
P-TSOPII-34-1 500 mil DRAM (access time 60 ns)
HYB 3165405J-50
on request
P-SOJ-34-1 500 mil DRAM (access time 50 ns)
HYB 3165405J-60
on request
P-SOJ-34-1 500 mil DRAM (access time 60 ns)
HYB 3165405T-50
on request
P-TSOPII-34-1 500 mil DRAM (access time 50 ns)
HYB 3165405T-60
on request
P-TSOPII-34-1 500 mil DRAM (access time 60 ns)
HYB 3165405TL-50
on request
P-TSOPII-34-1 500 mil DRAM (access time 50 ns)
HYB 3165405TL-60
on request
P-TSOPII-34-1 500 mil DRAM (access time 60 ns)
A0-A12
Address Inputs for HYB 3164405J/T(L)
A0-A11
Address Inputs for HYB 3165405J/T(L)
RAS
Row Address Strobe
OE
Output Enable
I/O1-I/O4
Data Input/Output
CAS
Column Address Strobe
WRITE
Read/Write Input
Vcc
Power Supply ( + 3.3V)
Vss
Ground
相關PDF資料 |
PDF描述 |
|---|---|
| HYB3165405AT-60 | 16M x 4-Bit Dynamic RAM |
| HYB3164405BTL-50 | 16M x 4-Bit Dynamic RAM |
| HYB3165405BTL-50 | 16M x 4-Bit Dynamic RAM |
| HYB3164405BJ-60 | SRAM Memory IC; Memory Type:NMOS SRAM; Interface Type:Serial; Access Time, Tacc:350ns; Package/Case:16-DIP; Mounting Type:Through Hole |
| HYB3164405AJ | High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD 0 to 70 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HYB3164405ATL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3164405ATL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3164405BJ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3164405BJ-40 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3164405BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
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