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參數(shù)資料
| 型號(hào)： | HYB3164800AJ |
| 廠商： | SIEMENS AG |
| 英文描述： | 8M x 8-Bit Dynamic RAM |
| 中文描述： | 8米× 8位動(dòng)態(tài)隨機(jī)存儲(chǔ)器 |
| 文件頁數(shù)： | 2/26頁 |
| 文件大?。?/td> | 247K |
| 代理商： | HYB3164800AJ |
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Semiconductor Group
2
HYB3164(5)800AJ/AT(L)-40/-50/-60
8M x 8-DRAM
This device is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is fabricated in an
advanced second generation 64Mbit 0,35
μ
m CMOS silicon gate process technology. The circuit
and process design allow this device to achieve high performance and low power dissipation. This
DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or
LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)800AJ/AT to be packaged in a
400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit
densities and are compatible with commonly used automatic testing and insertion equipment. The
HYB3164(5)800ATL parts (L-versions) have a very low power sleep mode“ supported by Self
Refresh
Ordering Information
Pin Names
Type
Ordering
Code
Package
Descriptions
HYB 3164800AJ-40
P-SOJ-32-1 400 mil
DRAM (access time 40 ns)
HYB 3164800AJ-50
P-SOJ-32-1 400 mil
DRAM (access time 50 ns)
HYB 3164800AJ-60
P-SOJ-32-1 400 mil
DRAM (access time 60 ns)
HYB 3164800AT-40
P-TSOPII-32-1 400 mil
DRAM (access time 40 ns)
HYB 3164800AT-50
P-TSOPII-32-1 400 mil
DRAM (access time 50 ns)
HYB 3164800AT-60
P-TSOPII-32-1 400 mil
DRAM (access time 60 ns)
HYB 3165800AJ-40
P-SOJ-32-1 400 mil
DRAM (access time 40 ns)
HYB 3165800AJ-50
P-SOJ-32-1 400 mil
DRAM (access time 50 ns)
HYB 3165800AJ-60
P-SOJ-32-1 400 mil
DRAM (access time 60 ns)
HYB 3165800AT-40
P-TSOPII-32-1 400 mil
DRAM (access time 40 ns)
HYB 3165800AT-50
P-TSOPII-32-1 400 mil
DRAM (access time 50 ns)
HYB 3165800AT-60
P-TSOPII-32-1 400 mil
DRAM (access time 60 ns)
HYB 3164(5)800ATL
P-TSOPII-32-1 400 mil
Low Power DRAMs
A0-A12
Address Inputs for 8k-refresh versions HYB 3164800AJ/AT(L)
A0-A11
Address Inputs for 4k-refresh versions HYB 3165800AJ/AT(L)
RAS
Row Address Strobe
OE
Output Enable
I/O1-I/O8
Data Input/Output
CAS
Column Address Strobe
WE
Read/Write Input
Vcc
Power Supply ( + 3.3V)
Vss
Ground
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3164800AJ-50 | High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 |
| HYB3164800AJ-60 | High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 |
| HYB3164800AT-50 | High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 |
| HYB3164800AT-60 | High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 |
| HYB3164800T-60 | High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3164800AJ-40 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM |
| HYB3164800AJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM |
| HYB3164800AJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM |
| HYB3164800AT-40 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM |
| HYB3164800AT-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM |
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