• 參數(shù)資料
    型號: HYB3164800J-50
    廠商: SIEMENS A G
    元件分類: DRAM
    英文描述: 8M x 8-Bit Dynamic RAM
    中文描述: 8M X 8 FAST PAGE DRAM, 50 ns, PDSO34
    文件頁數(shù): 8/26頁
    文件大?。?/td> 247K
    代理商: HYB3164800J-50
    Semiconductor Group
    8
    HYB3164(5)800AJ/AT(L)-40/-50/-60
    8M x 8-DRAM
    DC-Characteristics (cont’d)
    T
    A
    = 0 to 70 °C,
    V
    SS
    = 0 V,
    V
    CC
    = 3.3 V
    ±
    0.3 V
    Parameter
    Symbol
    refresh version Unit Note
    4k
    8k
    Operating Current
    -40 ns version
    -50 ns version
    -60 ns version
    (RAS, CAS, address cycling: tRC = tRC min.)
    I
    CC1
    155
    130
    105
    110
    90
    75
    mA
    mA
    mA
    2) 3) 4)
    Standby Current
    (RAS=CAS= Vih)
    I
    CC2
    2
    2
    mA
    RAS Only Refresh Current:
    - -40 ns version
    -50ns version
    -60 ns version
    (RAS cycling: CAS = VIH: tRC = tRC min.)
    Fast Page Mode Current:
    -40 ns version
    -50 ns version
    -60 ns version
    (RAS =
    V
    IL
    , CAS, address cycling: tPC=tPC min.)
    Standby Current
    (RAS=CAS= Vcc-0.2V)
    Standby Current (L-Version)
    (RAS=CAS= Vcc-0.2V)
    I
    CC3
    155
    130
    105
    110
    90
    75
    mA
    mA
    mA
    2) 4)
    I
    CC4
    70
    60
    50
    70
    60
    50
    mA
    mA
    mA
    2) 3) 4)
    I
    CC5
    900
    900
    μ
    A
    I
    CC5
    200
    200
    μ
    A
    CAS Before RAS Refresh Current
    -40 ns version
    -50 ns version
    -60 ns version
    (RAS, CAS cycling: tRC = tRC min.)
    I
    CC6
    155
    130
    105
    155
    130
    105
    mA
    mA
    mA
    2) 4)
    Self Refresh Current (L-version only)
    (CBR cycle with tRAS>TRASSmin, CAS held low,
    WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
    I
    CC7
    400
    400
    μ
    A
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