參數(shù)資料
型號(hào): HYB3164800T-50
廠商: SIEMENS A G
元件分類(lèi): DRAM
英文描述: 8M x 8-Bit Dynamic RAM
中文描述: 8M X 8 FAST PAGE DRAM, 50 ns, PDSO34
文件頁(yè)數(shù): 8/26頁(yè)
文件大?。?/td> 247K
代理商: HYB3164800T-50
Semiconductor Group
8
HYB3164(5)800AJ/AT(L)-40/-50/-60
8M x 8-DRAM
DC-Characteristics (cont’d)
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V
Parameter
Symbol
refresh version Unit Note
4k
8k
Operating Current
-40 ns version
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
I
CC1
155
130
105
110
90
75
mA
mA
mA
2) 3) 4)
Standby Current
(RAS=CAS= Vih)
I
CC2
2
2
mA
RAS Only Refresh Current:
- -40 ns version
-50ns version
-60 ns version
(RAS cycling: CAS = VIH: tRC = tRC min.)
Fast Page Mode Current:
-40 ns version
-50 ns version
-60 ns version
(RAS =
V
IL
, CAS, address cycling: tPC=tPC min.)
Standby Current
(RAS=CAS= Vcc-0.2V)
Standby Current (L-Version)
(RAS=CAS= Vcc-0.2V)
I
CC3
155
130
105
110
90
75
mA
mA
mA
2) 4)
I
CC4
70
60
50
70
60
50
mA
mA
mA
2) 3) 4)
I
CC5
900
900
μ
A
I
CC5
200
200
μ
A
CAS Before RAS Refresh Current
-40 ns version
-50 ns version
-60 ns version
(RAS, CAS cycling: tRC = tRC min.)
I
CC6
155
130
105
155
130
105
mA
mA
mA
2) 4)
Self Refresh Current (L-version only)
(CBR cycle with tRAS>TRASSmin, CAS held low,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
I
CC7
400
400
μ
A
相關(guān)PDF資料
PDF描述
HYB3165800T-50 8M x 8-Bit Dynamic RAM
HYB3165800AJ-50 8M x 8-Bit Dynamic RAM
HYB3165800AJ-60 Wideband, Low-Distortion Fully Differential Amplifier 8-MSOP -40 to 85
HYB3165800AT-50 8M x 8-Bit Dynamic RAM
HYB3165800AT-60 Wideband, Low-Distortion Fully Differential Amplifier 8-MSOP -40 to 85
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