參數(shù)資料
型號: HYB3164805AT-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: Enhanced Product Wideband Low-Distortion Fully Differential Amplifier 8-MSOP-PowerPAD -55 to 125
中文描述: 8M X 8 EDO DRAM, 60 ns, PDSO32
文件頁數(shù): 5/32頁
文件大?。?/td> 477K
代理商: HYB3164805AT-60
Semiconductor Group
153
HYB3164(5)805J/T(L)-50/-60
8M x 8 EDO-DRAM
Block Diagram for HYB 3165805J/T(L)
相關(guān)PDF資料
PDF描述
HYB3164805BJ 8M x 8-Bit Dynamic RAM
HYB3164805BJ-60 Wideband, Low Distortion Fully Differential Amplifier with Shutdown 8-SOIC -40 to 85
HYB3164805BTL-60 8M x 8-Bit Dynamic RAM
HYB3164805J Wideband, Low Distortion Fully Differential Amplifier with Shutdown 8-MSOP -40 to 85
HYB3164805T-50 8M x 8-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3164805ATL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3164805ATL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3164805BJ 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3164805BJ-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3164805BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM