參數(shù)資料
型號: HYB3164805BTL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 8M x 8-Bit Dynamic RAM
中文描述: 8M X 8 EDO DRAM, 60 ns, PDSO32
封裝: 0.400 INCH, PLASTIC, TSOP2-32
文件頁數(shù): 23/32頁
文件大?。?/td> 477K
代理商: HYB3164805BTL-60
Semiconductor Group
171
HYB3164(5)805J/T(L)-50/-60
8M x 8 EDO-DRAM
Hyper Page Mode (EDO) Read-Modify-Write Cycle
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相關(guān)PDF資料
PDF描述
HYB3164805J Wideband, Low Distortion Fully Differential Amplifier with Shutdown 8-MSOP -40 to 85
HYB3164805T-50 8M x 8-Bit Dynamic RAM
HYB3164805T-60 Wideband, Low Distortion Fully Differential Amplifier with Shutdown 8-MSOP -40 to 85
HYB3164805ATL-50 8M x 8-Bit Dynamic RAM
HYB3165805ATL-50 8M x 8-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3164805J 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3164805J-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3164805J-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3164805T-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3164805T-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM