參數(shù)資料
型號(hào): HYB3165160AT-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 FAST PAGE DRAM, 60 ns, PDSO50
文件頁數(shù): 9/26頁
文件大?。?/td> 216K
代理商: HYB3165160AT-60
Semiconductor Group
9
HYB3164(5/6)160AT(L)-40/-50/-60
4M x 16-DRAM
DC-Characteristics (cont’d)
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V
Parameter
Symbol
refresh version
Unit Note
2k
4k
8k
Operating Current
-40 ns version
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
I
CC1
250
210
170
155
130
105
110
90
75
mA
mA
mA
2) 3) 4)
Standby Current
(RAS=CAS= Vih)
I
CC2
2
2
2
mA
RAS Only Refresh Current:
- -40 ns version
-50ns version
-60 ns version
(RAS cycling: CAS = VIH: tRC = tRC min.)
Fast Page Mode Current:
-40 ns version
-50 ns version
-60 ns version
(RAS =
V
IL
, CAS, address cycling: tPC=tPC min.)
Standby Current
(RAS=CAS= Vcc-0.2V)
Standby Current (L-Version)
(RAS=CAS= Vcc-0.2V)
I
CC3
250
210
170
155
130
105
110
90
75
mA
mA
mA
2) 4)
I
CC4
70
60
50
70
60
50
70
60
50
mA
mA
mA
2) 3) 4)
I
CC5
900
900
900
μ
A
I
CC5
200
200
200
μ
A
CAS Before RAS Refresh Current
-40 ns version
-50 ns version
-60 ns version
(RAS, CAS cycling: tRC = tRC min.)
I
CC6
250
210
170
155
130
105
155
130
105
mA
mA
mA
2) 4)
Self Refresh Current (L-version only)
(CBR cycle with tRAS>TRASSmin, CAS held low,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
I
CC7
400
400
400
μ
A
相關(guān)PDF資料
PDF描述
HYB3166160AT-60 4M x 16-Bit Dynamic RAM
HYB3164160AT 4M x 16-Bit Dynamic RAM
HYB3164160AT-50 High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
HYB3165160AT-50 4M x 16-Bit Dynamic RAM
HYB3164160ATL-50 4M x 16-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3165160ATL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3165160ATL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3165160T50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM
HYB3165160T-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3165160T60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM