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參數(shù)資料
| 型號： | HYB3165160ATL-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 4M x 16-Bit Dynamic RAM |
| 中文描述： | 4M X 16 FAST PAGE DRAM, 60 ns, PDSO50 |
| 文件頁數(shù)： | 8/26頁 |
| 文件大小： | 216K |
| 代理商： | HYB3165160ATL-60 |
Semiconductor Group
8
HYB3164(5/6)160AT(L)-40/-50/-60
4M x 16-DRAM
Absolute Maximum Ratings
Operating temperature range..............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.3 W
Data out current (short circuit)..................................................................................................50 mA
Note
Stresses above those listed under Absolute Maximum Ratings“ may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may effect device
reliability.
DC Characteristics
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit Note
min.
max.
Input high voltage
V
IH
V
IL
V
OH
2.0
Vcc+0.3
V
1)
Input low voltage
– 0.3
0.8
V
1)
Output high voltage (LVTTL)
Output H“ level voltage (Iout = -2mA)
2.4
–
V
Output low voltage (LVTTL)
Output L“l(fā)evel voltage (Iout = +2mA)
V
OL
–
0.4
V
Output high voltage (LVCMOS)
Output H“ level voltage (Iout = -100uA)
V
OH
Vcc-0.2 -
V
Ouput low voltage (LVCMOS)
Output L“ level voltage (Iout = +100uA)
V
OL
-
0.2
V
Input leakage current,any input
(0 V < Vin < Vcc , all other pins = 0 V
I
I(L)
– 2
2
μ
A
Output leakage current
(DO is disabled, 0 V < Vout < Vcc )
I
O(L)
– 2
2
μ
A
相關PDF資料 |
PDF描述 |
|---|---|
| HYB3166160ATL-60 | 4M x 16-Bit Dynamic RAM |
| HYB3166160AT-50 | Wideband Fully Differential Amplifier 16-QFN -40 to 85 |
| HYB3164160AT-40 | 4M x 16-Bit Dynamic RAM |
| HYB3165160AT-40 | 4M x 16-Bit Dynamic RAM |
| HYB3166160AT-40 | 4M x 16-Bit Dynamic RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3165160T50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
| HYB3165160T-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3165160T60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM |
| HYB3165160T-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3165165AT-40 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
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