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Semiconductor Group
4
HYB3164(5)400AJ/AT(L)-40/-50/-60
16M x 4-DRAM
TRUTH TABLE
FUNCTION
RAS
CAS
WE
OE
ROW
ADDR
COL
ADDR
I/O1-
I/O4
Standby
H
H - X
X
X
X
X
High Impedance
Read
L
L
H
L
ROW
COL
Data Out
Early-Write
L
L
L
X
ROW
COL
Data In
Delayed-Write
L
L
H - L
H
ROW
COL
Data In
Read-Modify-Write
L
L
H - L
L - H
ROW
COL
Data Out, Data In
Fast Page Mode Read
1st Cycle
L
H - L
H
L
ROW
COL
Data Out
2nd Cycle
L
H - L
H
L
n/a
COL
Data Out
Fast Page Mode Early
Write
1st Cycle
L
H - L
L
X
ROW
COL
Data In
2nd Cycle
L
H - L
L
X
n/a
COL
Data In
Fast Page Mode RMW
1st Cycle
L
H - L
H - L
L - H
ROW
COL
Data Out, Data In
2st Cycle
L
H - L
H - L
L - H
n/a
COL
Data Out, Data In
RAS only refresh
L
H
X
X
ROW
n/a
High Impedance
CAS-before-RAS refresh
H - L
L
H
X
X
n/a
High Impedance
Test Mode Entry
H - L
L
L
X
X
n/a
High Impedance
Hidden Refresh
READ
L-H-L
L
H
L
ROW
COL
Data Out
WRITE
L-H-L
L
L
X
ROW
COL
Data In
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3164400T-60 | 16M x 4-Bit Dynamic RAM |
| HYB3165400T-60 | 16M x 4-Bit Dynamic RAM |
| HYB3164400AJ-60 | 16M x 4-Bit Dynamic RAM |
| HYB3165400AJ-60 | Bipolar Transistor; Collector Emitter Voltage, Vceo:75V; Power Dissipation, Pd:1.67W; DC Current Gain Min (hfe):120; C-E Breakdown Voltage:75V; Collector Current:1A; Transistor Polarity:NPN RoHS Compliant: Yes |
| HYB3164400AJ-40 | 16M x 4-Bit Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3165400J-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165400J-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165400T-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165400T-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
| HYB3165405AJ-40 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
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