參數(shù)資料
型號: HYB3165405T-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: Wideband, Low-Distortion Fully Differential Amplifier 8-SOIC -40 to 85
中文描述: 16M X 4 EDO DRAM, 60 ns, PDSO34
文件頁數(shù): 11/32頁
文件大?。?/td> 473K
代理商: HYB3165405T-60
Semiconductor Group
99
HYB3164(5)405J/T(L)-50/-60
16M x 4-DRAM
CAS precharge to RAS Delay
t
RHCP
t
OEP
t
OEHC
t
WPZ
27
35
ns
OE pulse width
7
10
ns
OE hold time from CAS high
7
10
ns
WE pulse width to output disable atCAS
high
7
10
ns
Output buffer turn-off delay from WE
t
WPZ
0
10
0
10
ns
Hyper Page Mode (EDO) Read-
modify-Write Cycle
Hyper page mode (EDO) read-write
cycle time
t
PRWC
51
66
ns
CAS precharge to WE
t
CPWD
41
49
ns
CAS before RAS refresh cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
t
WRH
5
5
ns
CAS hold time
8
10
ns
RAS to CAS precharge time
5
5
ns
Write to RAS precharge time
8
10
ns
Write hold time referenced to RAS
8
10
ns
CAS-before-RAS counter test cycle
CAS precharge time (CAS-before-RAS
counter test cycle)
t
CPT
35
40
ns
Self Refresh Cycle
RAS pulse width during self refresh
t
RASS
t
RPS
t
CHS
100k
_
100k
_
ns
17
RAS precharge time during self refresh
84
_
104
_
ns
17
CAS hold time during self refresh
-50
_
-50
_
ns
17
AC Characteristics
(cont’d)
5)6)
T
A
= 0 to 70 C,
V
CC
= 3.3 V
±
0.3V ,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
min.
max.
min.
max.
相關(guān)PDF資料
PDF描述
HYB3164405ATL-50 16M x 4-Bit Dynamic RAM
HYB3165405ATL-50 16M x 4-Bit Dynamic RAM
HYB3164405ATL-60 16M x 4-Bit Dynamic RAM
HYB3165405ATL-60 16M x 4-Bit Dynamic RAM
HYB3164405AJ-40 16M x 4-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3165405TL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165405TL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM
HYB3165800AJ-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3165800AJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3165800AJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM