參數(shù)資料
型號(hào): HYB3165405TL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 16M x 4-Bit Dynamic RAM
中文描述: 16M X 4 EDO DRAM, 60 ns, PDSO34
文件頁數(shù): 14/32頁
文件大小: 473K
代理商: HYB3165405TL-60
Semiconductor Group
102
HYB3164(5)405J/T(L)-50/-60
16M x 4-DRAM
Read Cycle
Row
Column
Row
Valid Data Out
RAS
CAS
Address
WE
OE
I/O
(Inputs)
I/O
(Outputs)
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
t
RAS
t
RC
t
CSH
t
RAD
t
CAS
t
RP
t
RAH
t
CRP
t
RSH
t
RCD
t
RAL
t
ASR
t
CAH
t
ASC
t
ASR
t
RCH
t
RRH
t
RCS
t
AA
t
OEA
t
CLZ
t
CAC
t
OEZ
t
ODD
t
CDD
t
OFF
t
DZC
t
DZO
t
RAC
Hi Z
Hi Z
“H” or “L”
WL1
相關(guān)PDF資料
PDF描述
HYB3164405AT-60 16M x 4-Bit Dynamic RAM
HYB3165405AT-60 16M x 4-Bit Dynamic RAM
HYB3164405BTL-50 16M x 4-Bit Dynamic RAM
HYB3165405BTL-50 16M x 4-Bit Dynamic RAM
HYB3164405BJ-60 SRAM Memory IC; Memory Type:NMOS SRAM; Interface Type:Serial; Access Time, Tacc:350ns; Package/Case:16-DIP; Mounting Type:Through Hole
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