參數(shù)資料
型號: HYB3165800AJ-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: Wideband, Low-Distortion Fully Differential Amplifier 8-MSOP -40 to 85
中文描述: 8M X 8 FAST PAGE DRAM, 60 ns, PDSO32
文件頁數(shù): 11/26頁
文件大?。?/td> 247K
代理商: HYB3165800AJ-60
Semiconductor Group
11
HYB3164(5)800AJ/AT(L)-40/-50/-60
8M x 8-DRAM
Fast Page Mode Read-Modify-Write
Cycle
Fast page mode read-write cycle
time
t
PRWC
60
71
80
ns
CAS precharge to WE
t
CPWD
40
48
55
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
5
5
5
ns
CAS hold time
5
5
10
ns
RAS to CAS precharge time
0
0
0
ns
Write to RAS precharge time
5
5
10
ns
Write hold time referenced to RAS
t
WRH
5
5
10
ns
Self Refresh Cycle (L-version only)
RAS pulse width
RAS precharge time
t
RASS
100k
75
100k
90
100k
110
ns
ns
17
t
RPS
17
CAS hold time
t
CHS
-50
-50
-50
ns
17
Test Mode Cycle
Write command setup time
t
WTS
5
5
5
ns
18
Write command hold time
t
WTH
5
5
5
ns
18
Capacitance
T
A
= 0 to 70 °C,
V
CC
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A11,A12)
C
I1
C
I2
C
IO
5
pF
Input capacitance (RAS, CAS, WE, OE)
7
pF
I/O capacitance (I/O1-I/O8)
7
pF
AC Characteristics
(cont’d)
(note: 6,7,8)
AC64-2F
T
A
= 0 to 70 °C,
V
CC
= 3.3
±
0.3V
Parameter
Symbol
-40
-50
-60
Unit
Note
min.
max. min.
max. min.
max.
相關(guān)PDF資料
PDF描述
HYB3165800AT-50 8M x 8-Bit Dynamic RAM
HYB3165800AT-60 Wideband, Low-Distortion Fully Differential Amplifier 8-MSOP -40 to 85
HYB3165800T-60 8M x 8-Bit Dynamic RAM
HYB3164800J-50 8M x 8-Bit Dynamic RAM
HYB3165800J-50 PT 8C 8#16 PIN PLUG
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3165800AT-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3165800AT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3165800AT-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3165800J-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3165800J-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM