參數(shù)資料
型號： HYB3165805BTL-50
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 8M x 8-Bit Dynamic RAM
中文描述： 8M X 8 EDO DRAM, 50 ns, PDSO32
封裝： 0.400 INCH, PLASTIC, TSOP2-32
文件頁數(shù)： 7/32頁
文件大?。?/td> 477K
代理商： HYB3165805BTL-50
Semiconductor Group
155
HYB3164(5)805J/T(L)-50/-60
8M x 8 EDO-DRAM
Absolute Maximum Ratings
Operating temperature range..............................................................................................0 to 70 C
Storage temperature range.........................................................................................– 55 to 150 C
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
Note
Stresses above those listed under Absolute Maximum Ratings“ may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may effect device
reliability.
DC Characteristics
T
A
= 0 to 70 C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V, (values in brackets for HYB 3165805J/T)
Parameter
Symbol
Limit Values
Unit Note
min.
max.
Input high voltage
V
IH
V
IL
V
OH
2.0
Vcc+0.3
V
1)
Input low voltage
– 0.3
0.8
V
1)
Output high voltage (LVTTL)
Output H“ level voltage (Iout = -2mA)
2.4
–
V
Output low voltage (LVTTL)
Output L“l(fā)evel voltage (Iout = +2mA)
V
OL
–
0.4
V
Output high voltage (LVCMOS)
Output H“ level voltage (Iout = -100uA)
V
OH
Vcc-0.2 -
V
Ouput low voltage (LVCMOS)
Output L“ level voltage (Iout = +100uA)
V
OL
-
0.2
V
Input leakage current,any input
(0 V < Vin < Vcc , all other pins = 0 V
I
I(L)
– 2
2
μ
A
Output leakage current
(DO is disabled, 0 V < Vout < Vcc )
I
O(L)
– 2
2
μ
A
Average Vcc supply current:
-50 ns version
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
Standby Vcc supply current
(RAS=CAS= Vih)
I
CC1
–
–
110 (140)
100 (120)
mA
mA
2) 3) 4)
I
CC2
–
2
mA
–
相關(guān)PDF資料
PDF描述
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HYB3165160T-60 4M x 16-Bit Dynamic RAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3165805BTL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3165805J-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3165805J-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3165805T-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3165805T-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
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