參數(shù)資料
型號(hào)： HYB3165805T-50
廠商： SIEMENS A G
元件分類(lèi)： DRAM
英文描述： Wideband, Low-Distortion Fully Differential Amplifier 8-SOIC -40 to 85
中文描述： 8M X 8 EDO DRAM, 50 ns, PDSO34
文件頁(yè)數(shù)： 2/32頁(yè)
文件大?。?/td> 477K
代理商： HYB3165805T-50
Semiconductor Group
150
HYB3164(5)805J/T(L)-50/-60
8M x 8 EDO-DRAM
This HYB3164(5)805 is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits. The device is
fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process
technology. The circuit and process design allow this device to achieve high performance and low
power dissipation. The HYB3164(5)805 operates with a single 3.3 +/-0.3V power supply and
interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB
3164(5)805 to be packaged in a 500mil wide SOJ-34 or TSOP-34 plastic package. These packages
provide high system bit densities and are compatible with commonly used automatic testing and
insertion equipment.The HYB3164(5)805TL parts have a very low power sleep mode“ supported
by Self Refresh.
Ordering Information
Pin Names
Type
Ordering
Code
on request
Package
Descriptions
HYB 3164805J-50
P-SOJ-34-1 500 mil DRAM (access time 50 ns)
HYB 3164805J-60
on request
P-SOJ-34-1 500 mil DRAM (access time 60 ns)
HYB 3164805T-50
on request
P-TSOPII-34-1 500 mil DRAM (access time 50 ns)
HYB 3164805T-60
on request
P-TSOPII-34-1 500 mil DRAM (access time 60 ns)
HYB 3164805TL-50
on request
P-TSOPII-34-1 500 mil DRAM (access time 50 ns)
HYB 3164805TL-60
on request
P-TSOPII-34-1 500 mil DRAM (access time 60 ns)
HYB 3165805J-50
on request
P-SOJ-34-1 500 mil DRAM (access time 50 ns)
HYB 3165805J-60
on request
P-SOJ-34-1 500 mil DRAM (access time 60 ns)
HYB 3165805T-50
on request
P-TSOPII-34-1 500 mil DRAM (access time 50 ns)
HYB 3165805T-60
on request
P-TSOPII-34-1 500 mil DRAM (access time 60 ns)
HYB 3165805TL-50
on request
P-TSOPII-34-1 500 mil DRAM (access time 50 ns)
HYB 3165805TL-60
on request
P-TSOPII-34-1 500 mil DRAM (access time 60 ns)
A0-A12
Address Inputs for HYB 3164805J/T(L)
A0-A11
Address Inputs for HYB 3165805J/T(L)
RAS
Row Address Strobe
OE
Output Enable
I/O1-I/O8
Data Input/Output
CAS
Column Address Strobe
WRITE
Read/Write Input
Vcc
Power Supply ( + 3.3V)
Vss
Ground
相關(guān)PDF資料
PDF描述
HYB3165805T-60 8M x 8-Bit Dynamic RAM
HYB3164805AJ-40 8M x 8-Bit Dynamic RAM
HYB3165805AJ-40 8M x 8-Bit Dynamic RAM
HYB3164805AJ-50 8M x 8-Bit Dynamic RAM
HYB3165805AJ-50 8M x 8-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3165805T-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3165805TL-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3165805TL-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:8M x 8-Bit Dynamic RAM
HYB3166160AT-40 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3166160AT-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
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