參數(shù)資料
型號(hào)： HYB3166160ATL-50
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 4M x 16-Bit Dynamic RAM
中文描述： 4M X 16 FAST PAGE DRAM, 50 ns, PDSO50
文件頁(yè)數(shù)： 2/26頁(yè)
文件大小： 216K
代理商： HYB3166160ATL-50
Semiconductor Group
2
HYB3164(5/6)160AT(L)-40/-50/-60
4M x 16-DRAM
This device is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on
an advanced second generation 64Mbit 0,35
μ
m-CMOS silicon gate process technology. The circuit
and process design allow this device to achieve high performance and low power dissipation. This
DRAM operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or
LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)160AT to be packaged in a 400
mil wide TSOP-50 package. These packages provide high system bit densities and are compatible
with commonly used automatic testing and insertion equipment. The HYB3164(5/6)160ATL parts
(L-version) have a very low power sleep mode“ supported by Self Refresh.
Ordering Information
Type
Ordering
Code
Package
Descriptions
8k-refresh versions:
HYB 3164160AT-40
P-TSOPII-50 400 mil
DRAM (access time 40 ns)
HYB 3164160AT-50
P-TSOPII-50 400 mil
DRAM (access time 50 ns)
HYB 3164160AT-60
P-TSOPII-50 400 mil
DRAM (access time 60 ns)
HYB 3164160ATL-50
P-TSOPII-50 400 mil
DRAM (access time 50 ns)
HYB 3164160ATL-60
P-TSOPII-50 400 mil
DRAM (access time 60 ns)
4k-refresh versions:
HYB 3165160AT-40
P-TSOPII-50 400 mil
DRAM (access time 40 ns)
HYB 3165160AT-50
P-TSOPII-50 400 mil
DRAM (access time 50 ns)
HYB 3165160AT-60
P-TSOPII-50 400 mil
DRAM (access time 60 ns)
HYB 3165160ATL-50
P-TSOPII-50 400 mil
DRAM (access time 50 ns)
HYB 3165160ATL-60
P-TSOPII-50 400 mil
DRAM (access time 60 ns)
2k-refresh versions:
HYB 3166160AT-40
P-TSOPII-50 400 mil
DRAM (access time 40 ns)
HYB 3166160AT-50
P-TSOPII-50 400 mil
DRAM (access time 50 ns)
HYB 3166160AT-60
P-TSOPII-50 400 mil
DRAM (access time 60 ns)
HYB 3166160ATL-50
P-TSOPII-50 400 mil
DRAM (access time 50 ns)
HYB 3166160ATL-60
P-TSOPII-50 400 mil
DRAM (access time 60 ns)
相關(guān)PDF資料
PDF描述
HYB3164160ATL-60 4M x 16-Bit Dynamic RAM
HYB3165160ATL-60 4M x 16-Bit Dynamic RAM
HYB3166160ATL-60 4M x 16-Bit Dynamic RAM
HYB3166160AT-50 Wideband Fully Differential Amplifier 16-QFN -40 to 85
HYB3164160AT-40 4M x 16-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3166160ATL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3166165AT-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3166165AT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3166165AT-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3166165ATL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
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