參數(shù)資料
型號: HYB3166165BTL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 14/29頁
文件大小: 284K
代理商: HYB3166165BTL-60
Semiconductor Group
14
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Read Cycle
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Row
Column
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Valid Data Out
RAS
UCAS
LCAS
Address
WE
OE
I/O
(Inputs)
I/O
(Outputs)
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
t
RCD
t
RAS
t
RC
t
CSH
t
RAD
t
CAS
t
RP
t
RAH
t
CRP
t
RSH
t
RAL
t
ASR
t
CAH
t
ASC
t
ASR
t
RRH
t
RCS
t
AA
t
OEA
t
CLZ
t
CAC
t
OEZ
t
ODD
t
OFF
t
DZO
t
RAC
Hi Z
Hi Z
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“H” or “L”
WL1
相關PDF資料
PDF描述
HYB3164165TL-50 4M x 16-Bit Dynamic RAM
HYB3164165TL-60 4M x 16-Bit Dynamic RAM
HYB3164165T-60 4M x 16-Bit Dynamic RAM
HYB3164165T High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70
HYB3164165T-50 4M x 16-Bit Dynamic RAM
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