參數(shù)資料
型號: HYB39L256160AC-7.5
廠商: INFINEON TECHNOLOGIES AG
英文描述: BENCH MOUNTED CRIMP MACHINE
中文描述: BJAWBMSpecialty DRAM的移動RAM
文件頁數(shù): 5/6頁
文件大?。?/td> 569K
代理商: HYB39L256160AC-7.5
OCTS (On-Chip Temperature Sensor):
The built-in temperature sensor adapts the refresh
rate to the actual junction temperature of the chip
without draining any CPU power. (Note: with
standard DRAMs, the refresh rate is set to work at
the max. temperature.)
TCSR (Temperature-Compensated Self-Refresh):
Same as OCTS but externally triggered
CPU power required
Speed:
133 MHz
CAS Latency
: 3-3-3
Density
Part number
Temp.
Power
Power
# of
OCTS TCSR PASR DPD
DS
GREEN
Package
range
supply core
supply I/O
banks
product
128 Mb
8 M x 16
HYB39L128160AT-7.5
0 - 70°C
3.3 V
3.3 V
4
TSOP-54
HYB39L128160AC-7.5
0 - 70°C
3.3 V
3.3 V
4
FBGA-54
HYB25L128160AC-7.5
0 - 70°C
2.5 V
2.5 V / 1.8 V
4
X
X
X
FBGA-54
HYE25L128160AC-7.5
-25 - 85°C
2.5 V
2.5 V / 1.8 V
4
X
X
X
FBGA-54
NEW!
HYB18L128160BF-7.5
0 - 70°C
1.8 V
1.8 V
4
X
X
X
X
X
FBGA-54
NEW!
HYE18L128160BF-7.5
-25 - 85°C
1.8 V
1.8 V
4
X
X
X
X
X
FBGA-54
NEW!
HYB18L128160BC-7.5
0 - 70°C
1.8 V
1.8 V
4
X
X
X
X
FBGA-54
NEW!
HYE18L128160BC-7.5
-25 - 85°C
1.8 V
1.8 V
4
X
X
X
X
FBGA-54
256 Mb
16 M x 16
HYB39L256160AT-7.5
0 - 70°C
3.3 V
3.3 V
4
TSOP-54
HYB39L256160AC-7.5
0 - 70°C
3.3 V
3.3 V
4
FBGA-54
HYB25L256160AC-7.5
0 - 70°C
2.5 V
2.5 V / 1.8 V
4
X
X
X
X
FBGA-54
HYE25L256160AC-7.5
-25 - 85°C
2.5 V
2.5 V / 1.8 V
4
X
X
X
X
FBGA-54
HYB25L256160AF-7.5
0 - 70°C
3.3 V
3.3 V or
4
X
X
X
X
X
FBGA-54
or 2.5 V
2.5 V / 1.8 V
HYE25L256160AF-7.5
-25 - 85°C
3.3 V
3.3 V or
4
X
X
X
X
X
FBGA-54
or 2.5 V
2.5 V / 1.8 V
NEW!
HYB18L256160BF-7.5
0 - 70°C
1.8 V
1.8 V
4
X
X
X
X
X
FBGA-54
NEW!
HYE18L256160BF-7.5
-25 - 85°C
1.8 V
1.8 V
4
X
X
X
X
X
FBGA-54
NEW!
HYB18L256160BC-7.5
0 - 70°C
1.8 V
1.8 V
4
X
X
X
X
FBGA-54
NEW!
HYE18L256160BC-7.5
-25 - 85°C
1.8 V
1.8 V
4
X
X
X
X
FBGA-54
512Mb,Dual
HYB25L512160AC-7.5
3.3V
3.3V or
4
X
X
X
FBGA-54
16 M x 16
0 - 70°C
or 2.5 V
2.5 V / 1.8 V
Product Portfolio
PASR (Partial Array Self-Refresh):
Allows user to select volume of memory needed to
further reduce power consumption
Adjustable from all 4 banks to 1/16 array
DPD (Deep Power-Down):
Maximum power consumption reduction by cutting
off power supply to Mobile-RAM
Data is not retained
DS (Selectable Drive Strength):
Can be adjusted to reflect bus load, e.g. half
strength for point-to-point and full strength for
module applications
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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