參數(shù)資料
型號(hào)： HYB39S128400CT
廠商： INFINEON TECHNOLOGIES AG
英文描述： 128-MBit Synchronous DRAM
中文描述： 128兆位同步DRAM
文件頁(yè)數(shù)： 15/51頁(yè)
文件大?。?/td> 470K
代理商： HYB39S128400CT
HYB 39S128400/800/160CT(L)
128-MBit Synchronous DRAM
INFINEON Technologies
15
9.01
Electrical Characteristics
Absolute Maximum Ratings
Operating Temperature Range.......................................................................................0 to + 70
°
C
Storage Temperature Range..................................................................................
–
55 to + 150
°
C
Input/Output Voltage.........................................................................................
–
0.3 to
V
DD
+ 0.3 V
Power Supply Voltage
V
DD
/
V
DDQ
..............................................................................
–
0.3 to + 4.6 V
Power Dissipation....................................................................................................................... 1 W
Data out Current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Recommended Operation and DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
,
V
DDQ
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
V
DD
+ 0.3
0.8
Input High Voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
V
1, 2
Input Low Voltage
–
0.3
V
1, 2
Output High Voltage (
I
OUT
=
–
4.0 mA)
Output Low Voltage (
I
OUT
= 4.0 mA)
Input Leakage Current, any input
(0 V <
V
IN
<
V
DDQ
, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
Notes
1.)All voltages are referenced to
V
.
2.)V
may overshoot to
V
+ 2.0 V for pulse width of < 4 ns with 3.3 V.
V
may undershoot to
–
2.0 V for pulse
width < 4.0 ns with 3.3 V. Pulse width measured at 50% points with amplitude measured peak to DC reference.
2.4
–
V
–
–
0.4
V
μ
A
–
–
5
5
–
I
O(L)
–
5
5
μ
A
–
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Values
Unit
min.
max.
Input Capacitance (CLK)
C
I1
C
I2
2.5
3.5
pF
Input Capacitance
(A0 - A11, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
2.5
3.8
pF
Input/Output Capacitance (DQ)
C
IO
4.0
6.0
pF
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