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參數(shù)資料
| 型號： | HYB5117400BT-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 4M x 4-Bit Dynamic RAM |
| 中文描述： | 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 |
| 封裝： | 0.300 INCH, PLASTIC, TSOP2-24 |
| 文件頁數(shù)： | 6/26頁 |
| 文件大?。?/td> | 138K |
| 代理商： | HYB5117400BT-50 |
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HYB 5116(7)400BJ-50/-60
HYB 3116(7)400BJ/BT-50/-60
4M
×
4 DRAM
Semiconductor Group
6
1998-10-01
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70
°
C
Storage temperature range........................................................................................ – 55 to 150
°
C
Input/output voltage (5 V versions)................................................... – 0.5 to min (
V
CC
+ 0.5, 7.0) V
Input/output voltage (3.3 V versions)................................................ – 0.5 to min (
V
CC
+ 0.5, 4.6) V
Power supply voltage (5 V versions) ....................................................................... – 1.0 V to 7.0 V
Power supply voltage (3.3 V versions) .................................................................... – 1.0 V to 4.6 V
Power dissipation( 5 V versions) .............................................................................................1.0 W
Power dissipation (3.3 V versions) ..........................................................................................0.5 W
Data out current (short circuit) ................................................................................................50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A
= 0 to 70
°
C,
V
SS
= 0 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
5 V Versions
Power supply voltage
V
CC
V
IH
V
IL
V
OH
V
OL
4.5
5.5
V
CC
+ 0.5 V
0.8
V
Input high voltage
2.4
1
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
3.3 V Versions
– 0.5
V
1
2.4
–
V
1
–
0.4
V
1
Power supply voltage
V
CC
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
3.0
3.6
V
CC
+ 0.5 V
0.8
V
Input high voltage
2.0
1
Input low voltage
TTL Output high voltage (
I
OUT
= – 2 mA)
TTL Output low voltage (
I
OUT
= 2 mA)
CMOS Output high voltage (
I
OUT
= – 100
μ
A)
CMOS Output low voltage (
I
OUT
= 100
μ
A)
– 0.5
V
1
2.4
–
V
1
–
V
CC
– 0.2 –
–
0.4
V
1
V
0.2
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB5117400BT-60 | 4M x 4-Bit Dynamic RAM |
| HYB5117400BT-70 | 4M x 4-Bit Dynamic RAM |
| HYB 5117400BJ-60 | 4M×4-Bit Dynamic RAM(4M×4位 動態(tài) RAM) |
| HYB5117400BJ-70 | 4M x 4-Bit Dynamic RAM |
| HYB5117400BJ-60 | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB5117400BT-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM |
| HYB5117400BT-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM |
| HYB5117405BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB5117405BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB5117405BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
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